MT9HVF6472IY-40E Micron Semiconductor Products, MT9HVF6472IY-40E Datasheet

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MT9HVF6472IY-40E

Manufacturer Part Number
MT9HVF6472IY-40E
Description
512mb, 1gb X72, Ecc, Sr 244-pin Ddr2 Vlp Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
DDR2 SDRAM VLP Mini-RDIMM
MT9HVF6472(P)K – 512MB
MT9HVF12872(P)K – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 244-pin, very low profile mini registered dual in-line
• Fast data transfer rates: PC2-3200, PC2-4200,
• 512MB (64 Meg x 72) or 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent
• Supports duplicate output strobe (RDQS/RDQS#)
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
PDF: 09005aef81c9620b/Source: 09005aef81c961ec
HVF9C64_128x72K.fm - Rev. C 3/07 EN
Speed
Grade
memory module (VLP Mini-RDIMM)
PC2-5300, or PC2-6400
operation
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Q = +1.8V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CL = 6
CK
800
512MB, 1GB: (x72, ECC, SR) 244-Pin DDR2 VLP Mini-RDIMM
Data Rate (MT/s)
CL = 5
800
667
667
www.micron.com
1
CL = 4
533
53E
533
533
400
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Parity
• Operating temperature
• Package
• Frequency/CAS latency
• PCB height
PCB height: 18.2mm (0.72in)
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 244-pin DIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 18.2mm (0.72in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
CL = 3
module offerings.
will add one clock cycle to CL.
400
400
400
244-Pin VLP Mini-RDIMM
t
(ns)
12.5
RCD
15
15
15
15
A
A
1
2
≤ +85°C)
≤ +70°C)
©2005 Micron Technology, Inc. All rights reserved.
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
P
Y
I
(ns)
t
55
55
55
55
55
RC

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MT9HVF6472IY-40E Summary of contents

Page 1

DDR2 SDRAM VLP Mini-RDIMM MT9HVF6472(P)K – 512MB MT9HVF12872(P)K – 1GB For component data sheets, refer to Micron’s Web site: Features • 244-pin, very low profile mini registered dual in-line memory module (VLP Mini-RDIMM) • Fast data transfer rates: PC2-3200, PC2-4200, ...

Page 2

Table 2: Addressing Refresh count Row address Device bank address Device page size per bank Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Modules Base device: MT47H64M8, Module 2 Part Number Density ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 244-Pin VLP Mini-RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 ...

Page 4

Table 6: Pin Descriptions Symbol Type ODT0 Input On-die termination: ODT (registered HIGH) enables termination resistance internal to (SSTL_18) the DDR2 SDRAM. When enabled, ODT is only applied to each of the following pins: DQ, DQS, DQS#, RDQS, RDQS#, CB, ...

Page 5

Table 6: Pin Descriptions (continued) Symbol Type V Supply SSTL_18 reference voltage. REF V Supply Ground Supply Serial EEPROM positive power supply: +1.7V to +3.6V. DDSPD NC – No connect: These pins should be left unconnected. RFU – ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NC/DQS9# DQS1 DQS1# DM1/DQS10 NC/DQS10# DQS2 DQS2# DM2/DQS11 NC/DQS11# DQS3 DQS3# DM3/DQS12 NC/DQS12# DQS8 DQS8# DM8/DQS17 NC/DQS17# S0# BA0–BA1/BA2 A0–A15 RAS# CAS# WE# CKE0 ODT0 ...

Page 7

General Description The MT9HVF6472(P)K and MT9HVF12872(P)K DDR2 SDRAM modules are high-speed, CMOS, dynamic random-access 512MB and 1GB memory modules organized in a x72 configuration. DDR2 SDRAM modules use internally configured 4-bank (512Mb) or 8-bank (1Gb) DDR2 SDRAM devices. DDR2 SDRAM ...

Page 8

Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions above those indicated in each ...

Page 9

I Specifications DD Table 9: I Specifications and Conditions – 512MB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge ...

Page 10

Table 10: I Specifications and Conditions – 1GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current ...

Page 11

Register and PLL Specifications Table 11: Register Specifications SSTU32865 device or equivalent JESD82-19 Parameter Symbol DC high-level input voltage DC low-level input voltage high-level IH AC ...

Page 12

Table 12: PLL Specifications CU877 device or equivalent JESD82-8.01 Parameter Symbol DC high-level input V IH voltage DC low-level input V IL voltage V Input voltage (limits high-level input V IH voltage V DC low-level input IL voltage ...

Page 13

Table 14: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current: ...

Page 14

Table 16: Serial Presence-Detect Matrix Byte Description 0 Number of SPD bytes used by Micron 1 Total number of bytes in SPD device 2 Fundamental memory type 3 Number of row addresses on assembly 4 Number of column addresses on ...

Page 15

Table 16: Serial Presence-Detect Matrix (continued) Byte Description 27 MIN row precharge time, 28 MIN row active-to-row active, 29 MIN RAS#-to-CAS# delay, 30 MIN active-to-precharge time, 31 Module rank density 32 Address and command setup time, 33 Address and command ...

Page 16

Table 16: Serial Presence-Detect Matrix (continued) Byte Description 63 Checksum for bytes 0–62 ECC/ECC and parity 64 Manufacturer’s JEDEC ID code 65–71 Manufacturer’s JEDEC ID code 72 Manufacturing location 73–90 Module part number (ASCII) 91 PCB identification code 92 Identification ...

Page 17

Module Dimensions Figure 3: 244-Pin DDR2 VLP Mini-RDIMM 1.00 (0.039 1.80 (0.071 6.00 (0.236) TYP 1.00 (0.039) 0.60 (0.024) TYP PIN 1 TYP 2.00 (0.079) TYP 42.90 (1.689) TYP U8 U9 3.30 (0.130) TYP ...

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