MT9VDVF6472G-40B Micron Semiconductor Products, MT9VDVF6472G-40B Datasheet

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MT9VDVF6472G-40B

Manufacturer Part Number
MT9VDVF6472G-40B
Description
512mb X72, Ecc, Sr 184-pin Ddr Vlp Rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
Features
• 184-pin, very low profile registered dual in-line
• Fast data transfer rates: PC2700 or PC3200
• 512MB (64 Meg x 72)
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined, double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Single rank
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Gold edge contacts
DDR SDRAM VLP RDIMM
MT9VDVF6472 – 512MB
For component data sheets, refer to Micron’s Web site:
Table 1:
PDF: 09005aef81c737fb/Source: 09005aef81c7379d
DVF9C64x72.fm - Rev. B 10/07 EN
memory module (VLP RDIMM)
(-40B V
2n-prefetch architecture
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-40B
-335
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
400
t
RCD and
Data Rate (MT/s)
CL = 2.5
333
333
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
512MB (x72, ECC, SR) 184-Pin DDR VLP RDIMM
1
Figure 1:
Notes: 1. Contact Micron for industrial temperature
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
CL = 2
PCB height: 18.29mm (0.72in)
266
266
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 184-pin DIMM (standard)
– 184-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (166 MHz), 333 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
module offerings.
adds one clock cycle to CL.
t
(ns)
RCD
184-Pin VLP RDIMM (MO-206)
15
18
A
A
1
(ns)
t
≤ +85°C)
≤ +70°C)
15
18
RP
©2005 Micron Technology, Inc. All rights reserved.
2
(ns)
t
55
60
RC
Marking
Features
None
-40B
-335
Notes
G
Y
I
1

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MT9VDVF6472G-40B Summary of contents

Page 1

DDR SDRAM VLP RDIMM MT9VDVF6472 – 512MB For component data sheets, refer to Micron’s Web site: Features • 184-pin, very low profile registered dual in-line memory module (VLP RDIMM) • Fast data transfer rates: PC2700 or PC3200 • 512MB (64 ...

Page 2

... Column address Module rank address Table 3: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M8, Module 2 Part Number Density MT9VDVF6472G-40B__ 512MB MT9VDVF6472Y-40B__ 512MB 512MB MT9VDVF6472G-335__ 512MB MT9VDVF6472Y-335__ Notes: 1. Data sheets for the base device can be found on Micron’s Web site. ...

Page 3

Pin Assignments and Descriptions Table 4: Pin Assignments 184-Pin VLP RDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 4

Table 5: Pin Descriptions Symbol A0–A12 BA0, BA1 CK0, CK0# CKE0 DM0–DM8 RAS#, CAS#, WE# RESET# S0# SA0–SA2 SCL CB0–CB7 DQ0–DQ63 DQS0–DQS8 SDA DDSPD V REF PDF: 09005aef81c737fb/Source: 09005aef81c7379d DVF9C64x72.fm - ...

Page 5

Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3 ...

Page 6

General Description The MT9VDVF6472 is a high-speed, CMOS, dynamic random access 512MB memory module and is organized in a x72 configuration. This module uses a DDR SDRAM device with four internal banks. DDR SDRAM modules use a double data rate ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 6 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the ...

Page 8

I Specifications DD Table 8: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 9

Register and PLL Specifications Table 9: Register Specifications SSTV16859 devices or equivalent JESD82-4B Parameter Symbol high-level IH DC input voltage low-level IL DC input voltage AC high-level ...

Page 10

Table 10: PLL Specifications CVF857 device or equivalent JESD82-1A Parameter Symbol DC high-level input voltage low-level input voltage Input voltage (limits Input differential-pair cross IX voltage Input differential voltage ...

Page 11

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 12

Module Dimensions Figure 3: 184-Pin DDR VLP RDIMM 2.0 (0.079) R (4X 2.5 (0.098) D (2X) 2.31 (0.091) TYP Pin 1 2.21 (0.087) TYP 1.27 (0.05) TYP 1.0 (0.039) TYP 64.77 (2.55) Pin 184 Notes: 1. All ...

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