MT8HTF12864HY-667 Micron Semiconductor Products, MT8HTF12864HY-667 Datasheet

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MT8HTF12864HY-667

Manufacturer Part Number
MT8HTF12864HY-667
Description
256mb, 512mb, 1gb X64, Sr 200-pin Ddr2 Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Table 1:
DDR2 SDRAM SODIMM
MT8HTF3264H(I) – 256MB
MT8HTF6464H(I) – 512MB
MT8HTF12864H(I) – 1GB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small outline, dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 256MB (32 Meg x 64), 512MB (64 Meg x 64),
• V
• V
• JEDEC standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• Four-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
• Programmable CAS# latency (CL)
• Posted CAS# additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8,192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Single rank
PDF: 09005aef80eec96e/Source: 09005aef80eec946
HTF8C32_64_128x64HG.fm - Rev. E 6/08 EN
Speed
Grade
(SODIMM)
PC2-5300, or PC2-6400
1GB (128 Meg x 64)
operation
-80E
-800
-667
-53E
-40E
DD
DDSPD
= V
DD
= +1.7V to +3.6V
Nomenclature
Q = +1.8V
Key Timing Parameters
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
Products and specifications discussed herein are subject to change by Micron without notice.
CL = 6
800
256MB, 512MB, 1GB: (x64, SR) 200-Pin DDR2 SDRAM SODIMM
t
CK
CL = 5
Data Rate (MT/s)
800
667
667
www.micron.com/products/dram/ddr2
CL = 4
1
533
533
533
533
400
Figure 1:
Notes: 1. Industrial temperatures apply to DRAM only.
Options
• Operating temperature
• Commercial (0°C ≤ T
• Industrial (–40°C ≤ T
• Package
• Frequency/CAS latency
• PCB Height
– 200-pin SODIMM (Pb-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
– 30mm (1.18in)
Height 30mm (1.18in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for product availability.
3. CL = CAS (READ) latency
4. Not available in 256MB density
CL = 3
400
400
400
200-pin SODIMM (MO-224 R/C “B”)
t
(ns)
12.5
C
RCD
C
15
15
15
15
≤ +95°C)
≤ +85°C)
3
©2004 Micron Technology, Inc. All rights reserved.
4
4
1,2
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
-80E
-53E
-40E
-800
-667
Y
I
(ns)
t
55
55
55
55
55
RC

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MT8HTF12864HY-667 Summary of contents

Page 1

DDR2 SDRAM SODIMM MT8HTF3264H(I) – 256MB MT8HTF6464H(I) – 512MB MT8HTF12864H(I) – 1GB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small outline, dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or ...

Page 2

... Base device: MT47H128M8, 1Gb DDR2 SDRAM Module 1 Part Number Density 1GB MT8HTF12864HY-80E__ MT8HTF12864HY-800__ 1GB MT8HTF12864HY-667__ 1GB MT8HTF12864HY-53E__ 1GB 1GB MT8HTF12864HY-40E__ Notes: 1. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT8HTF6464HY-667A3. ...

Page 3

Module Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQS2 101 REF 103 DQ0 55 DQ18 105 A10/AP 155 ...

Page 4

Table 7: Pin Descriptions Symbol Type Description A[15:0] Input Address inputs: Provide the row address for ACTIVE commands, and the column address and auto precharge bit (A10) for READ/WRITE commands, to select one location out of the memory array in ...

Page 5

Figure 2: Functional Block Diagram S0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS3# ...

Page 6

General Description The MT8HTF3264H, MT8HTF6464H, and MT8HTF12864H DDR2 SDRAM modules are high-speed, CMOS, dynamic random-access 256MB, 512MB, and 1GB memory modules organized in x64 configuration. DDR2 SDRAM modules use internally configured quad- bank (256Mb, 512Mb) or eight-bank (1Gb) DDR2 SDRAM ...

Page 7

Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the ...

Page 8

DRAM Operating Conditions Recommended AC operating conditions are given in the DDR2 component data sheets. Component specifications are available on Micron’s Web site. Module speed grades correlate with component speed grades, as shown in Table 9. Table 9: Module and ...

Page 9

Table 10: DDR2 I Specifications and Conditions – 256MB DD Values are for the MT47H32M8 DDR2 SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...

Page 10

Table 11: DDR2 I Specifications and Conditions – 512MB DD Values are for the MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...

Page 11

Table 12: DDR2 I Specifications and Conditions – 1GB (die revision A) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 13: DDR2 I Specifications and Conditions – 1GB (die revision E) DD Values are for the MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 13

Serial Presence-Detect Table 14: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

Module Dimensions Figure 3: 200-pin DDR2 SODIMM Module Dimensions 2.0 (0.079) R (2X) U1 1.8 (0.071) D (2X) 6.0 (0.236) TYP 1.0 (0.039) TYP 2.0 (0.079) TYP U6 PIN 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or ...

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