PMD4002K NXP Semiconductors, PMD4002K Datasheet - Page 7

no-image

PMD4002K

Manufacturer Part Number
PMD4002K
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
7. Characteristics
PMD4002K_1
Product data sheet
Table 7.
[1]
Symbol Parameter
NPN transistor
I
h
V
V
V
Diode
V
Device
t
t
t
t
t
t
Device with optional capacitor C1
t
t
t
t
t
t
CBO
d
r
on
s
f
off
d
r
on
s
f
off
FE
CEsat
BEsat
BE
F
Pulse test: t
collector-base cut-off
current
DC current gain
collector-emitter
saturation voltage
base-emitter saturation
voltage
base-emitter voltage
forward voltage
delay time
rise time
turn-on time
storage time
fall time
turn-off time
delay time
rise time
turn-on time
storage time
fall time
turn-off time
Characteristics
p
300 s;
Rev. 01 — 3 November 2006
0.02.
Conditions
V
V
T
V
V
V
I
I
I
I
V
I
I
I
C1 = 1 nF
C
C
C
C
F
C
C
j
CB
CB
CE
CE
CE
CE
= 200 mA
= 150 C
= 200 mA; I
= 500 mA; I
= 200 mA; I
= 500 mA; I
= 0.15 A; I
= 0.15 A; I
= 40 V; I
= 40 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 5 V; I
C
C
C
C
E
E
B
B
= 1 mA
= 200 mA
= 500 mA
= 300 mA
B
B
B
B
= 5 mA
= 5 mA;
= 0 A
= 0 A;
= 20 mA
= 50 mA
= 20 mA
= 50 mA
[1]
[1]
[1]
[1]
Min
-
-
100
100
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMD4002K
Typ
-
-
210
170
100
150
300
0.86
0.95
830
-
6
21
27
484
120
604
3
1
4
23
41
64
© NXP B.V. 2006. All rights reserved.
MOSFET driver
Max
10
10
-
300
-
250
500
1
1.1
-
-
-
-
-
-
-
-
-
-
-
-
-
1.1
Unit
nA
mV
mV
V
V
mV
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
7 of 15

Related parts for PMD4002K