PMD9002D NXP Semiconductors, PMD9002D Datasheet

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PMD9002D

Manufacturer Part Number
PMD9002D
Description
Low Vcesat Biss Transistors
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PMD9002D115
Manufacturer:
NXP Semiconductors
Quantity:
1 950
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and
high-speed switching diode connected in totem pole configuration in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
I
I
I
I
I
I
I
Table 1.
[1]
Symbol
Per transistor
I
Transistor 2 (TR2)
V
I
Diode (D1)
I
V
C
CM
F
CEO
F
PMD9002D
MOSFET driver
Rev. 01 — 20 November 2006
Two transistors and one high-speed switching diode as driver
Totem pole configuration
Application-optimized pinout
Internal connections to minimize layout effort
Space-saving solution
Reduces component count
MOSFET driver
Pulse test: t
Quick reference data
Parameter
collector current
collector-emitter voltage
peak collector current
forward current
forward voltage
p
300 s;
0.02.
Conditions
open base
single pulse;
t
I
p
F
= 200 mA
1 ms
[1]
Min
-
-
-
-
-
Typ
-
-
-
-
-
Product data sheet
Max
0.1
45
0.2
0.2
1.1
Unit
A
V
A
A
V

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PMD9002D Summary of contents

Page 1

... PMD9002D MOSFET driver Rev. 01 — 20 November 2006 1. Product profile 1.1 General description NPN Resistor-Equipped Transistor (RET), NPN general-purpose transistor and high-speed switching diode connected in totem pole configuration in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features I Two transistors and one high-speed switching diode as driver I Totem pole confi ...

Page 2

... Marking codes Limiting values Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current input voltage positive negative collector-base voltage collector-emitter voltage Rev. 01 — 20 November 2006 PMD9002D Simplified outline Symbol TR2 Marking code 9C Conditions Min open emitter ...

Page 3

... O , standard footprint Rev. 01 — 20 November 2006 PMD9002D Conditions Min - single pulse single pulse [1] ...

Page 4

... O , standard footprint 2 3 Thermal characteristics Parameter Conditions thermal resistance from in free air junction to ambient O , standard footprint Rev. 01 — 20 November 2006 PMD9002D 006aaa919 75 125 175 amb 2 Min Typ [ [ [ © NXP B.V. 2006. All rights reserved. MOSFET driver ...

Page 5

... FR4 PCB, mounting pad for collector 1 cm Fig 3. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMD9002D_1 Product data sheet - Rev. 01 — 20 November 2006 PMD9002D MOSFET driver 006aaa920 (s) p 006aaa921 (s) p © ...

Page 6

... current 150 C j collector-emitter mA saturation voltage I = 100 mA 200 mA Rev. 01 — 20 November 2006 PMD9002D MOSFET driver 006aaa922 (s) p Min Typ = ...

Page 7

... DC current gain delay time rise time turn-on time storage time fall time turn-off time 300 s; 0.02. p Rev. 01 — 20 November 2006 PMD9002D MOSFET driver Min Typ = 610 660 [ ...

Page 8

... T (3) T Fig 6. TR1: Collector-emitter saturation voltage as a 006aaa032 10 V I(off) ( (mA) C (1) T (2) T (3) T Fig 8. TR1: Off-state input voltage as a function of Rev. 01 — 20 November 2006 PMD9002D 1 (1) 1 (2) ( (mA 100 C amb = 25 C amb ...

Page 9

... I (mA) C Fig 10. TR2: Collector current as a function of 006aaa931 V (1) (2) ( (mA) C (1) T (2) T (3) T Fig 12. TR2: Base-emitter saturation voltage as a Rev. 01 — 20 November 2006 PMD9002D 0.20 I (mA (A) 0.16 0.12 0.08 0. amb collector-emitter voltage; typical values 1.2 BEsat (V) 1 ...

Page 10

... I (mA) C (1) I (2) I (3) I Fig 14. TR2: Collector-emitter saturation voltage as a DUT (probe) oscilloscope 450 0. 2.5 mA 180 Rev. 01 — 20 November 2006 PMD9002D 1 ( (2) ( amb /I = 100 ...

Page 11

... T2: reverse taping PMD9002D_1 Product data sheet 3.1 2.7 6 3.0 1.7 2.5 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm Packing methods Package Description SOT457 4 mm pitch tape and reel pitch tape and reel; T2 Rev. 01 — 20 November 2006 PMD9002D 1.1 0 0.6 0 0.40 0.26 0.25 0.10 04-11-08 [1] Packing quantity 3000 [2] -115 [3] -125 Section 14. ...

Page 12

... Fig 18. Wave soldering footprint SOT457 (SC-74) PMD9002D_1 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 01 — 20 November 2006 PMD9002D MOSFET driver solder lands solder resist 0.45 0.55 occupied area solder paste msc422 solder lands 0.45 1.45 4.45 solder resist occupied area msc423 © NXP B.V. 2006. All rights reserved ...

Page 13

... NXP Semiconductors 12. Revision history Table 9. Revision history Document ID Release date PMD9002D_1 20061120 PMD9002D_1 Product data sheet Data sheet status Change notice Product data sheet - Rev. 01 — 20 November 2006 PMD9002D MOSFET driver Supersedes - © NXP B.V. 2006. All rights reserved ...

Page 14

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 20 November 2006 PMD9002D MOSFET driver © NXP B.V. 2006. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2006. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMD9002D MOSFET driver All rights reserved. Date of release: 20 November 2006 Document identifier: PMD9002D_1 ...

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