BGB420 Infineon Technologies Corporation, BGB420 Datasheet - Page 5

• Manufacturer Part Number: BGB420
• Description: Active Biased Transistor
• Manufacturer: Infineon Technologies Corporation

Data sheet
Maximum Ratings
Parameter
Maximum collector-emitter voltage
Maximum collector current
Maximum bias current
Maximum emitter-base voltage
Maximum base current
Total power dissipation, T
Junction temperature
Operating temperature range
Storage temperature range
Thermal resistance: junction-soldering point
Notes:
For detailed symbol description refer to figure 1.
1)
T
S
is measured on the emitter lead at the soldering point to the PCB
S
< 107°C
Fig. 1: Symbol definition
Bias
1)
Bias,4
I
Bias
B,1
I
5
B
V
EB
Symbol
R
T
V
I
V
T
P
Bias
th JS
I
T
STG
I
OP
CE
C
EB
B
tot
j
E,2
C,3
I
C
V
CE
-65 ... +150
-40 ..+85
Value
<270
120
150
3.5
1.5
0.7
30
3
2001-08-10
BGB420
Unit
K/W
mW
mA
mA
mA
°C
°C
°C
V
V