BGB420 Infineon Technologies Corporation, BGB420 Datasheet - Page 7

• Manufacturer Part Number: BGB420
• Description: Active Biased Transistor
• Manufacturer: Infineon Technologies Corporation

S-Parameter V
Data sheet
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
3.0
4.0
5.0
6.0
Frequency S11
[GHz]
Device Current I
30
25
20
15
10
5
0
0
0.5
0.4412
0.4064
0.3261
0.2854
0.2615
0.2525
0.2505
0.2476
0.2533
0.2579
0.2584
0.2874
0.3505
0.4061
0.4450
Mag
1
D
=2V, I
D
1.5
V
= f(V
D
[V]
C
-24.8
-47.4
-81.6
-105.8
-124.2
-136.4
-148.9
-158.2
-167.1
-173.3
-178.7
157.6
139.0
125.9
117.1
S11
Ang
=20mA (see Electrical Characteristics for conditions)
2
D
, R
2.5
270Ω
Bias
35.7070
31.7670
23.1980
17.2590
13.5050
10.9810
9.1940
7.8930
6.9070
6.1460
5.5300
3.6990
2.7770
2.1930
1.8050
S21
Mag
)
3
1.5kΩ
2.7kΩ
4.7kΩ
8.2kΩ
820Ω
3.5
160.6
143.9
120.9
106.9
97.5
90.6
84.8
80.1
75.6
71.7
68.2
51.6
36.1
21.5
8.6
S21
Ang
7
S12
0.0078
0.0157
0.0261
0.0351
0.0444
0.0537
0.0628
0.0720
0.0819
0.0915
0.1009
0.1495
0.1970
0.2392
0.2864
Mag
83.5
77.5
70.9
69.4
68.9
68.2
67.3
65.9
64.6
62.9
61.4
51.7
40.4
29.4
18.9
S12
Ang
0.9225
0.8321
0.6380
0.5012
0.4100
0.3435
0.2946
0.2571
0.2228
0.1966
0.1751
0.0802
0.0366
0.0913
0.1340
S22
Mag
2001-08-10
BGB420
-14.1
-26.2
-41.4
-49.6
-54.2
-57.4
-60.2
-62.6
-64.2
-66.0
-66.3
-70.1
-178.8
126.7
99.8
S22
Ang