BGB420 Infineon Technologies Corporation, BGB420 Datasheet - Page 8

• Manufacturer Part Number: BGB420
• Description: Active Biased Transistor
• Manufacturer: Infineon Technologies Corporation

Data sheet
Power Gain |S
V
Matching |S
V
D
D
−10
−15
−20
−25
−30
−35
= 3V, I
= 3V, I
30
25
20
15
10
−5
5
0
0
0
0
C
C
1
1
=20mA
=20mA
|S
Gma/Gms
21
11
|
2
|,|S
21
Frequency [GHz]
Frequency [GHz]
2
2
|
2
22
, Gma, Gms=f(f)
|=f(f)
3
3
4
4
S
S
11
22
5
5
6
6
8
Power Gain Gma, Gms=f(I
V
Output Compression Point
P
V
D
D
−1dB
= 3V
= 3V, f = 1.8GHz, Z
35
30
25
20
15
10
16
14
12
10
5
0
8
6
4
2
0
0
0
= f(I
5
C
5
)
10
10
15
I
I
C
C
[mA]
[mA]
15
L
20
= 50Ω
20
C
25
0.3GHz
0.9GHz
1.9GHz
2.5GHz
)
25
30
2001-08-10
BGB420
35
30