BGB420 Infineon Technologies Corporation, BGB420 Datasheet - Page 6

• Manufacturer Part Number: BGB420
• Description: Active Biased Transistor
• Manufacturer: Infineon Technologies Corporation

Data sheet
Electrical Characteristics at T
min./max. values verified by random sampling)
Parameter
Maximum available power gain
V
Insertion power gain
V
Insertion loss
V
Noise figure (Z
V
Output power at 1dB gain compression
V
Output third order intercept point
V
Collector-base capacitance
V
Current Ratio I
I
Bias
D
D
D
D
D
D
CB
=2V, I
=2V, I
=2V, I
=2V, I
=2V, I
=2V, I
=2V, f=1MHz
=0.5mA, V
c
c
c
c
c
c
=20mA, f=1.8GHz
=20mA
=0mA
=5mA
=20mA, f=1.8GHz
=20mA, f=1.8GHz
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
D
C
S
=3V
/I
=50Ω)
Bias
RF In
f=0.9GHz
f=1.8GHz
f=0.9GHz
f=1.8GHz
f=0.9GHz
f=1.8GHz
Z
Z
Z
Z
A
Bias-T
L
L
L/S
L/S
N.C.
=25°C (measured in test circuit specified in fig. 2,
=Z
=50Ω
Bias
=Z
=50Ω
LOPT
Bias,4
I
R
Bias
L/SOPT
Bias
B,1
6
Symbol
E,2
I
C,3
|S
C
P
OIP
F
G
C
CR
IL
-1dB
50Ω
21
MA
CB
|
Bias-T
3
2
I
D
min.
16.0
V
17
7
7
D
RF Out
17.5
0.16
typ.
1.3
1.5
22
16
21
15
12
10
22
20
10
max.
1.8
2.0
13
2001-08-10
BGB420
dBm
dBm
Unit
dB
dB
dB
dB
pF