PTVSXS1UR NXP Semiconductors, PTVSXS1UR Datasheet - Page 3

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PTVSXS1UR

Manufacturer Part Number
PTVSXS1UR
Description
400 W Transient Voltage Suppressor
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
7. Characteristics
Table 7.
T
PTVSXS1UR_SER_2
Product data sheet
Type number
PTVS3V3S1UR
PTVS5V0S1UR
PTVS6V0S1UR
PTVS6V5S1UR
PTVS7V0S1UR
j
= 25 C unless otherwise specified.
Characteristics per type; PTVS3V3S1UR to PTVS7V0S1UR
Reverse standoff
voltage
V
Max
3.3
5.0
6.0
6.5
7.0
RWM
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 6.
[1]
[2]
[3]
[4]
Symbol
P
I
I
T
T
T
Symbol
R
R
PPM
FSM
j
amb
stg
PPM
th(j-a)
th(j-sp)
(V)
In accordance with IEC 61643-321 (10/1000 s current waveform).
For PTVS3V3S1UR: P
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device mounted on a ceramic PCB, Al
Soldering point of cathode tab.
Limiting values
Thermal characteristics
Parameter
rated peak pulse power
rated peak pulse current
Non-repetitive peak
forward current
junction temperature
ambient temperature
storage temperature
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Breakdown voltage
V
I
Min
5.20
6.40
6.67
7.22
7.78
R
BR
= 10 mA
Rev. 02 — 10 September 2009
(V)
PPM
= 350 W
Typ
5.60
6.70
7.02
7.60
8.20
2
O
Max
6.00
7.00
7.37
7.98
8.60
3
, standard footprint.
Conditions
single half-sine
wave; t
Conditions
in free air
p
Reverse leakage
current
I
at V
Typ
5
5
5
5
3
RM
= 8.3 ms
( A)
RWM
PTVSxS1UR series
400 W Transient Voltage Suppressor
(V)
Max
600
400
400
250
100
[1][2]
[1]
[1]
[2]
[3]
[4]
Min
-
-
-
-
Min
-
-
-
-
55
65
Clamping voltage
V
Max
8.0
9.2
10.3
11.2
12.0
Typ
-
-
-
-
CL
Max
400
see
Table 7
and
50
150
+150
+150
© NXP B.V. 2009. All rights reserved.
(V)
8
Max
220
130
70
18
I
43.8
43.5
38.8
35.7
33.3
PPM
Unit
W
A
2
C
C
C
Unit
K/W
K/W
K/W
K/W
.
(A)
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