DGSK40-022A IXYS Corporation, DGSK40-022A Datasheet - Page 2

• Manufacturer Part Number: DGSK40-022A
• Description: Gallium Arsenide Schottky Rectifier
• Manufacturer: IXYS Corporation

© 2001 IXYS All rights reserved
Fig. 1 typ. forward characteristics
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Z
I
F
thJC
0.01
0.01
K/W
0.1
0.1
0.00001
30
10
10
A
1
1
0.0
0.5
0.0001
T
125°C
VJ
25°C
1.0
=
Rectifier Diode
by majority + minority carriers
V
extraction of excess carriers
causes temperature dependant
reverse recovery (t
delayed saturation leads to V
1.5
F
(I
F
Single Pulse
V
)
0.001
F
2.0
V
2.5
rr
, I
0.01
RM
Fig. 2 typ. junction capacity
C
, Q
J
100
300
pF
10
rr
)
0.1
FR
versus blocking voltage
0.1
by majority carriers only
V
reverse current charges
junction capacity C
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
F
1
(I
F
), see Fig. 1
10
1
T
DGS10-015/018BS
V
VJ
100
t
DGS 20-022A
DGS 20-025A
J
, see Fig. 2;
R
= 125°C
s
V
1000
10
Outline
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
(center pin only for DGSK types)
12.70
14.73
9.91
3.54
5.85
2.54
1.15
2.79
0.64
2.54
4.32
1.14
0.38
2.29
Min.
DGSK 40-022A
DGSK 40-025A
Millimeter
13.97
16.00
10.66
Max.
BSC
4.08
6.85
3.18
1.65
5.84
1.01
4.82
1.39
0.56
2.79
0.500
0.580
0.390
0.139
0.230
0.100
0.045
0.110
0.025
0.100
0.170
0.045
0.015
0.090
Min.
Inches
0.550
0.630
0.420
0.161
0.270
0.125
0.065
0.230
0.040
0.190
0.055
0.022
0.110
Max.
BSC
2 - 2