HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 27
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HN29V51211
Manufacturer Part Number
HN29V51211
Description
512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.HN29V51211.pdf
(42 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HN29V51211T-50H
Manufacturer:
ALESIS
Quantity:
622
Program (1) and Status Data Polling Timing Waveform
I/O0 to I/O7
Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 2112.
/Busy
CDE
RES
RDY
WE
2. Any commands, including reset command FFH, cannot be input while RDY/Busy is V
3. The status returns to the standby status after RDY/Busy returns to High-Z.
4. By using program (1), data can be programmed additionally for each sector before erase.
CE
OE
SC
t
SCS
t
t
t
RP
CDS
OEWS
t
CES
t
t
WP
DS
10H
t
CWC
t
WPH
t
CDS
t
CDH
t
AS
t
DH
t
t
SA (1)
WP
CWC
t
WPH
t
AS
t
t
AH
WP
High-Z
SA (2)
t
CDH
t
t
CDSS
AH
PD0
t
t
SDS
SCC
t
SDH
t
SPL
PD1
t
SP
PD2111
t
*
SP
1
t
SW
t
t
DS
WP
40H
t
t
CEH
DB
t
DH
t
SCHW
t
t
OEPS
CDH
OL
.
t
ASP
t
CE
I/O7 = V
t
OE
*
2
HN29V51211 Series
t
DF
OL
I/O7 = V
t
DF
High-Z
t
RDY
*
3
OH
t
CDS
27