HN29V51211 Renesas Electronics Corporation., HN29V51211 Datasheet - Page 6

• Manufacturer Part Number: HN29V51211
• Description: 512m And Type Flash Memory More Than 32,113-sector 542,581,248-bit - Hitachi Semiconductor
• Manufacturer: Renesas Electronics Corporation.

HN29V51211 Series
Memory Map and Address
6
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
Address
Sector address
Column address
Sector address
7FFFH
7FFEH
7FFDH
0002H
0001H
0000H
2. An
000H
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
to DC characteristics.
means "Don't care". The pin level can be set to either V
Cycles
SA (1): First cycle
SA (2): Second cycle
CA (1): First cycle
CA (2): Second cycle
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 bytes
2048 + 64 bytes
I/O0
A0
A8
A0
A8
I/O1
A1
A9
A1
A9
800H
Control bytes
I/O2
A10
A10
A2
A2
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
64 bytes
I/O3
A11
A11
A3
A3
83FH
I/O4
A12
A4
A4
IL
I/O5
Column address
A13
A5
A5
or V
I/O6
IH
A14
A6
A6
, referred
I/O7
A7
A7
*
2