FSS804 Sanyo Semiconductor Corporation, FSS804 Datasheet
FSS804
Manufacturer Part Number
FSS804
Description
N-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.FSS804.pdf
(4 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FSS804-TL-E
Manufacturer:
LT
Quantity:
2 274
Part Number:
FSS804-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENA0518
FSS804
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : S804
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW 10s)
Drain Current (PW 10 s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
Low ON-resistance.
4V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Crss
Ciss
Tstg
I DP
Tch
P D
yfs
I D
I D
t r
t f
Duty cycle 1%
Duty cycle 1%
Mounted on a ceramic board (1200mm
I D =1mA, V GS =0V
V DS =30V, V GS =0V
V GS = 16V, V DS =0V
V DS =10V, I D =1mA
V DS =10V, I D =14A
I D =14A, V GS =10V
I D =7A, V GS =4.5V
I D =7A, V GS =4V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
SANYO Semiconductors
FSS804
Conditions
Conditions
2
0.8mm), PW 10s
O0406PA MS IM TC-00000195
DATA SHEET
min
11.5
1.2
30
Ratings
typ
3000
Ratings
500
350
250
160
120
28
19
14
11
7
Continued on next page.
--55 to +150
max
150
3.3
30
20
14
18
52
2.6
10
10
16
20
No. A0518-1/4
1
Unit
Unit
m
m
m
pF
pF
pF
W
ns
ns
ns
ns
V
V
A
A
A
V
V
S
C
C
A
A
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FSS804 Summary of contents
Page 1
... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN FSS804 SANYO Semiconductors Symbol Conditions ...
Page 2
... IT11514 Ratings min typ max 0. =15V =14A 10V R L =1. PW= P.G 50 FSS804 =10V 0.5 1.0 1.5 2.0 2.5 3.0 Gate-to-Source Voltage (on --60 --40 -- 100 Ambient Temperature ...
Page 3
... Total Gate Charge 3.5 3.3 3.0 2.5 2.0 1.5 1.0 0 100 Ambient Temperature FSS804 = =10V 1 0.1 0 IT11516 10000 1000 100 ...
Page 4
... Note on usage : Since the FSS804 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...