FSS804 Sanyo Semiconductor Corporation, FSS804 Datasheet - Page 2

• Manufacturer Part Number: FSS804
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7005-002
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
0.595
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
0
0
1
8
1.27
I D =7A
Parameter
0.1
5.0
2
0.2
Drain-to-Source Voltage, V DS -- V
Gate-to-Source Voltage, V GS -- V
14A
5
4
4
0.3
0.43
R DS (on) -- V GS
6
I D -- V DS
0.4
0.5
8
0.6
0.2
Symbol
10
V SD
Qgs
Qgd
Qg
0.7
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : SOP8
12
0.8
V DS =10V, V GS =10V, I D =14A
V DS =10V, V GS =10V, I D =14A
V DS =10V, V GS =10V, I D =14A
I S =14A, V GS =0V
Ta=25 C
14
0.9
IT11512
IT11514
FSS804
1.0
16
Conditions
Switching Time Test Circuit
20
18
16
14
12
10
30
25
20
15
10
8
6
4
2
0
5
0
--60
0
V DS =10V
10V
--40
P.G
0V
PW=10 s
D.C. 1%
0.5
V IN
--20
Gate-to-Source Voltage, V GS -- V
Ambient Temperature, Ta -- C
1.0
0
min
V IN
R DS (on) -- Ta
50
20
1.5
G
I D -- V GS
40
Ratings
2.0
typ
V DD =15V
0.81
60
D
50
10
8
S
2.5
80
R L =1.07
I D =14A
max
100
FSS804
3.0
1.2
No. A0518-2/4
V OUT
120
3.5
Unit
nC
nC
nC
140
IT11513
IT11515
V
160
4.0