TIG022TS Sanyo Semiconductor Corporation, TIG022TS Datasheet
TIG022TS
Related parts for TIG022TS
TIG022TS Summary of contents
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... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TIG022TS SANYO Semiconductors N-Channel IGBT Light-Controlling Flash Applications 2 ...
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... Note1. Gate Series Resistance R G ≥82Ω is recommended for prolection purpose at the time of turn OFF. However, if dv/dt≤400V/µs is satisfied at customer’s actual set evaluation <82Ω can also be used. Note2. The collector voltage gradient must be smaller than 400V / µs to protect the device when it is turned off. TIG022TS Symbol Conditions ...
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... Gate-to-Emitter Voltage 6.0 Tc=75 °C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 Gate-to-Emitter Voltage (off 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 --50 -- Case Temperature °C TIG022TS 200 Tc=25 °C 180 V CE =5V 160 140 120 100 4.0 4.5 5.0 0 IT09927 6.0 Tc=25 °C 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 IT09929 ...
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... Gate-to-Emitter Voltage Note : TIG022TS has protection diode between gate and emitter but handling it requires sufficient care to be taken. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...