TIG022TS Sanyo Semiconductor Corporation, TIG022TS Datasheet - Page 4

• Manufacturer Part Number: TIG022TS
• Description: N-channel Igbt
• Manufacturer: Sanyo Semiconductor Corporation

160
140
120
100
1.0
0.1
10
80
60
40
20
7
5
3
2
7
5
3
2
7
5
0
Note : TIG022TS has protection diode between gate and emitter but handling it requires sufficient care to
10
0
C M =400µF
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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above.
1
be taken.
Gate-to-Emitter Voltage, V GE -- V
2
2
Collector Current, I C -- A
Tc=25 °C
3
SW Time -- I C
I CP -- V GE
3
5
Tc=70 °C
4
7
5
R L = 2.2 Ω, Tc= 25 °C
V GE = 4V, R G = 82 Ω
100
6
PW = 50 µs
7
2
IT09935
IT09937
TIG022TS
3
8
700
600
500
400
300
200
100
450
400
350
300
250
200
150
100
50
0
0
0
0
Tc=25 °C
Measurement Conditions 1
V CC = 320V
I CP = 138A
R L = 2.2 Ω
V GE = 4V
PW = 50 µs
V CM =330V
Tc≤70 ° C
V GE =4V
R G ≥82Ω
20
20
Collector Current (Pulse), I CP -- A
Gate Series Resistance, R G -- Ω
R G -- Turn OFF dv / dt
40
40
60
60
C M -- I CP
80
80
Measurement Conditions 2
100
100
120
120
PS
V CC = 345V
I CP = 150A
R L = 2.2 Ω
V GE = 4V
PW = 50 µs
No.9019-4/4
140
140
IT09936
IT09938
160
160