TF202C Sanyo Semiconductor Corporation, TF202C Datasheet - Page 2

• Manufacturer Part Number: TF202C
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Package Dimensions
unit : mm (typ)
7048-001
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
[Ta=25˚C, V CC =4.5V, R L =1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
Reduced Voltage Characteristic
Frequency Characteristic
Input Impedance
Output Impedance
Total Harmonic Distortion
Output Noise Voltage
500
450
400
350
300
250
200
150
100
50
0
0
Bottom View
1
1
Top View
1
Parameter
1.2
3
3
Drain-to-Source Voltage, V DS -- V
2
0.4
2
2
0.2
3
I D -- V DS
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
4
0 to 0.02
0.11
5
6
Symbol
∆G VV
 yfs 
∆Gvf
V NO
Ciss
Crss
THD
7
Z IN
G V
Z O
8
--0.5V
V DS =5V, V GS =0V, f=1kHz
V DS =5V, V GS =0V, f=1MHz
V DS =5V, V GS =0V, f=1MHz
V IN =10mV, f=1kHz
V IN =10mV, f=1kHz, V CC =4.5→1.5V
f=1kHz to 110Hz
f=1kHz
f=1kHz
V IN =30mV, f=1kHz
V IN =0V, A curve
IT02310
9
10
TF202C
Test Circuit
Conditions
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
500
450
400
350
300
250
200
150
100
50
0
0
15pF
OSC
Drain-to-Source Voltage, V DS -- V
1
min
I D -- V DS
0.5
VTVM
2
25
+
33µF
1kΩ
Ratings
Output Impedance
V
typ
1000
0.65
--3.0
--1.2
THD
1.2
3.5
1.0
3
B
max
V CC =4.5V
V CC =1.5V
A
--110
--3.5
--1.0
4
No. A0727-2/5
--0.5V
IT03015
Unit
MΩ
mS
dB
dB
dB
dB
pF
pF
Ω
%
5