GWM160-0055X1 IXYS Corporation, GWM160-0055X1 Datasheet
GWM160-0055X1
Manufacturer Part Number
GWM160-0055X1
Description
Three Phase Full Bridge With Trench Mosfets In Dcb Isolated High Current Package
Manufacturer
IXYS Corporation
Datasheet
1.GWM160-0055X1.pdf
(6 pages)
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
)
DSS
GSS
D25
D90
F25
F90
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste
D
J
J
C
C
C
C
GS
DS
DS
GS
GS
GS
= 00 A; R
= 25°C
= 25°C to 50°C
= 25°C
= 90°C
= 25°C (diode)
= 90°C (diode)
+ 2R
= V
= 0 V ; I
= 20 V; I
= ± 20 V; V
= 0 V; V
= 0 V; V
DSS
Pin to Chip
; V
D
D
GS
G
DS
DS
)
= 00 A
= mA
= 39 Ω;
DS
= 0 V
= 2 V; I
= 24 V
= 0 V
D
= 60 A
T
T
T
T
J
J
J
J
= 25°C
= 25°C
= 25°C
= 25°C
G
S
G2
S2
(T
J
= 25°C, unless otherwise specified)
min.
G3
G4
S4
S3
2.5
Characteristic Values
0.004
Maximum Ratings
0.7
0.60
typ.
05
40
25
550
20
2.7
4.5
0.
tbd
tbd
.2
G5
G6
S6
S5
max.
± 20
60
20
30
3.3
4.5
0.2
0.9
55
80
K/W
K/W
mW
mW
mA
mJ
mJ
mJ
nC
nC
nC
µA
µA
ns
ns
ns
ns
L+
L
L2
L3
L-
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 3 lead forms available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low RDSon
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
DSS
DSon typ.
connections
with optimized heat transfer
Bent leads
GWM 160-0055X1
= 2.7 mW
= 55 V
= 160 A
Straight leads
Surface Mount
Device
20080527f
- 6
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GWM160-0055X1 Summary of contents
Page 1
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MOSFETs Symbol Conditions 25°C to 50°C DSS 25°C D25 90°C D90 ...
Page 2
Source-Drain Diode Symbol Conditions V (diode 00 A; -di /dt = 800 A/µ Component Symbol Conditions I per ...
Page 3
S L traight eads GWM 60-0055X- GWM 60-0055X-SMD urface ount evice Part Name ...
Page 4
I = 0.25 mA DSS 1.1 1.0 0.9 0.8 0.7 - [°C] J Fig. Drain source breakdown voltage V vs. junction temperature T 350 ...
Page 5
160 25° 100 120 140 160 Q [nC] G Fig.7 Gate ...
Page 6
A 100 200 400 600 800 -di /dt [A/µs] F Fig. 3 Reverse recovery time t of the body diode vs. di/dt 0.6 0.5 0.4 160 A ...