GWM100-01X1 IXYS Corporation, GWM100-01X1 Datasheet
GWM100-01X1
Manufacturer Part Number
GWM100-01X1
Description
Three Phase Full Bridge With Trench Mosfets In Dcb Isolated High Current Package
Manufacturer
IXYS Corporation
Datasheet
1.GWM100-01X1.pdf
(6 pages)
Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
MOSFETs
Symbol
V
V
I
I
I
I
Symbol
R
V
I
I
Q
Q
Q
t
t
t
t
E
E
E
R
R
)
DSS
GSS
D25
D90
F25
F90
d(on)
r
d(off)
f
GS(th)
GS
on
off
recoff
V
DSS
DSon
thJC
thJH
g
gs
gd
DS
= I
1)
D
·(R
DS(on)
Conditions
T
T
T
T
T
Conditions
on chip level at
V
V
V
V
V
inductive load
V
I
T
with heat transfer paste
D
J
J
C
C
C
C
GS
DS
DS
GS
GS
GS
= 70 A; R
= 25°C
= 25°C to 50°C
= 25°C
= 90°C
= 25°C (diode)
= 90°C (diode)
+ 2R
= V
= 0 V ; I
= 20 V; I
= ± 20 V; V
= 0 V; V
= 0 V; V
DSS
Pin to Chip
; V
G
D
D
GS
DS
DS
)
= 33 Ω;
= 80 A
= 250 µA
DS
= 0 V
= 65 V; I
= 48 V
= 0 V
D
= 90 A
T
T
T
T
J
J
J
J
= 25°C
= 25°C
= 25°C
= 25°C
G
S
G2
S2
(T
J
= 25°C, unless otherwise specified)
min.
G3
G4
S4
S3
2.5
Characteristic Values
0.007
Maximum Ratings
typ.
30
290
7.5
0.
0.4
0.4
.2
4
90
30
30
95
55
G5
G6
S6
S5
max.
± 20
00
8.5
4.5
0.2
0.9
90
68
90
68
K/W
K/W
mW
mW
mA
mJ
mJ
mJ
nC
nC
nC
µA
µA
ns
ns
ns
ns
L+
L
L2
L3
L-
V
V
A
A
A
A
V
V
I
R
Applications
AC drives
• in automobiles
• in industrial vehicles
• in battery supplied equipment
Features
• MOSFETs in trench technology:
• package:
• Space and weight savings
Package options
• 3 lead frames available
D25
- electric power steering
- starter generator
- propulsion drives
- fork lift drives
- low R
- optimized intrinsic reverse diode
- high level of integration
- high current capability 300 A max.
- aux. terminals for MOSFET control
- terminals for soldering or welding
- isolated DCB ceramic base plate
- straight leads (SL)
- SMD lead version (SMD)
- bent leads (BL)
DSS
DSon typ.
connections
with optimized heat transfer
Bent leads
GWM 100-01X1
DSon
= 7.5 mW
= 100 V
= 90 A
Straight leads
Surface Mount
Device
20080527b
- 6
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GWM100-01X1 Summary of contents
Page 1
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package MOSFETs Symbol Conditions 25°C to 50°C DSS 25°C D25 90°C D90 ...
Page 2
Source-Drain Diode Symbol Conditions V (diode -di /dt = 800 A/µ Component Symbol Conditions I per ...
Page 3
S L traight eads GWM 00-0X- GWM 00-0X-SMD urface ount evice Part Name ...
Page 4
I = 0.25 mA DSS 1.1 1.0 0.9 0.8 0.7 - [°C] J Fig. Drain source breakdown voltage V vs. junction temperature T 180 160 ...
Page 5
25° [nC] G Fig.7 Gate charge characteristic 0 +10/0 V 0.5 ...
Page 6
200 400 600 800 1000 1200 1400 1600 -di /dt [A/µs] F Fig. 3 Reverse recovery time t of the body diode vs. di/dt 1.4 1.2 1 0.8 ...