RJK4007DPP Renesas Electronics Corporation., RJK4007DPP Datasheet - Page 4

• Manufacturer Part Number: RJK4007DPP
• Description: Transistors>switching/mosfets Nch Power Mos Fet High-speed Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK4007DPP
Electrical Characteristics
Notes: 4. Pulse test
REJ03G0581-0200 Rev.2.00 Jan 05, 2009
Page 2 of 6
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
GS(off)
V
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
r
f
Min
400
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.47
24.5
Typ
850
140
230
3.5
0.9
20
25
30
90
35
10
—
—
—
5
Max
0.55
4.0
1.5
10
—
—
—
—
—
—
—
—
—
—
—
—
0.1
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
V
V
A
A
V
I
I
V
V
I
V
V
f = 1 MHz
I
V
R
Rg = 25
V
V
I
I
di
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 14 A, V
= 14 A, V
= 1 mA, V
= 7 A, V
= 7 A
= 14 A
/dt = 100 A/ s
= 28.6
= 400 V, V
= 10 V, I
= 25 V
= 30 V, V
= 0
= 10 V
= 320 V
= 10 V
Test conditions
GS
GS
GS
GS
D
= 10 V
= 1 mA
= 0
= 0
GS
DS
= 0
(Ta = 25°C)
= 0
= 0
Note4
Note4