RJK4007DPP Renesas Electronics Corporation., RJK4007DPP Datasheet - Page 5

• Manufacturer Part Number: RJK4007DPP
• Description: Transistors>switching/mosfets Nch Power Mos Fet High-speed Switching Use
• Manufacturer: Renesas Electronics Corporation.

RJK4007DPP
Main Characteristics
REJ03G0581-0200 Rev.2.00 Jan 05, 2009
Page 3 of 6
0.001
0.01
100
2.0
1.6
1.2
0.8
0.4
0.1
Static Drain to Source on State Resistance
20
16
12
10
0
8
4
1
0
-25
1
Tc = 25°C
1 shot
Pulse Test
V
Drain to Source Voltage V
Gate to Source Voltage V
V
Pulse Test
Typical Transfer Characteristics
GS
Operation in this
area is limited by
R
Maximum Safe Operation Area
DS
Case Temperature Tc (°C)
DS(on)
0
= 10 V
vs. Temperature (Typical)
= 10 V
2
25
10
4
50
I
D
= 14 A
75
6
100
7 A
Tc = 75°C
100 125 150
−25°C
25°C
8
GS
DS
3 A
(V)
(V)
1000
10
1000
100
Static Drain to Source on State Resistance
0.1
10
10
10
8
6
4
2
1
0
0.1
1
Drain to Source Voltage V
Pulse Test
V
Ta = 25°C
Reverse Drain Current I
GS
Typical Output Characteristics
Body-Drain Diode Reverse
vs. Drain Current (Typical)
= 10 V
Recovery Time (Typical)
4
Drain Current I
1
8
10
di / dt = 100 A / µs
V
GS
12
= 0, Ta = 25°C
10
D
Pulse Test
Ta = 25°C
(A)
DR
16
DS
(A)
(V)
100
100
20