RJK5012DPP Renesas Electronics Corporation., RJK5012DPP Datasheet

no-image

RJK5012DPP

Manufacturer Part Number
RJK5012DPP
Description
Silicon N Channel Mos Fet High Speed Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RJK5012DPP
Manufacturer:
RENESAS
Quantity:
6 000
Part Number:
RJK5012DPP
Manufacturer:
RENESAS
Quantity:
67 734
Part Number:
RJK5012DPP-E0
Manufacturer:
RENESAS
Quantity:
12 500
Part Number:
RJK5012DPP-M0
Manufacturer:
RENESAS
Quantity:
12 500
RJK5012DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1545-0100 Rev.1.00 May 10, 2007
Page 1 of 6
Low on-resistance
Low leakage current
High speed switching
2. Value at Tc = 25 C
3. STch = 25 C, Tch
4. Limited by maximum safe operation area
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
10 s, duty cycle
Item
150 C
1
2 3
1%
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
I
AP
V
V
D
AR
Tstg
Tch
ch-c
I
Note4
GSS
DSS
DR
Note3
Note3
Note2
Note1
Note1
G
D
S
–55 to +150
Ratings
4.17
0.88
500
150
12
24
12
24
30
30
4
1. Gate
2. Drain
3. Source
REJ03G1545-0100
May 10, 2007
Unit
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.1.00

Related parts for RJK5012DPP

RJK5012DPP Summary of contents

Page 1

... RJK5012DPP Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current ...

Page 2

... RJK5012DPP Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time ...

Page 3

... RJK5012DPP Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 20 Pulse Test Drain to Source Voltage V Static Drain to Source on State Resistance vs. Drain Current 1 0.5 0.2 0.1 0.05 0.02 0. Drain Current I REJ03G1545-0100 Rev.1.00 May 10, 2007 Page ...

Page 4

... RJK5012DPP Body-Drain Diode Reverse Recovery Time 1000 500 200 100 100 Reverse Drain Current Dynamic Input Characteristics 800 100 V 600 DD 250 V 400 400 200 V = 400 Gate Charge Gate to Source Cutoff Voltage vs ...

Page 5

... RJK5012DPP Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.2 0.1 0.01 0.001 10 100 Switching Time Test Circuit Vin Monitor D.U.T. 10 Vin 10 V REJ03G1545-0100 Rev.1.00 May 10, 2007 Page Pulse Width PW (s) Vout Monitor R Vin L Vout 250 V t d(on ch–c(t) = (t) ch– ...

Page 6

... RJK5012DPP Package Dimensions Package Name JEITA Package Code RENESAS Code TO-220FN PRSS0003AB-A 2.54 ± 0.25 Ordering Information Part No. RJK5012DPP-00-T2 1050 pcs REJ03G1545-0100 Rev.1.00 May 10, 2007 Page Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 10 ± 0.3 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 Quantity Box (Tube) Unit: mm Shipping Container ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

Related keywords