RJK5012DPP Renesas Electronics Corporation., RJK5012DPP Datasheet - Page 3

• Manufacturer Part Number: RJK5012DPP
• Description: Silicon N Channel Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

RJK5012DPP
Main Characteristics
REJ03G1545-0100 Rev.1.00 May 10, 2007
Page 3 of 6
0.05
0.02
0.01
Static Drain to Source on State Resistance
0.5
0.2
0.1
80
60
40
20
20
16
12
8
4
1
0
0
1
Drain to Source Voltage V
Pulse Test
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature Tc ( C)
3
4
Drain Current I
50
10 V
vs. Drain Current
10
8
7 V
100
30
12
6 V
100
D
V
Pulse Test
GS
150
(A)
16
= 10 V
300
DS
5.8 V
5.6 V
5.4 V
5.2 V
(V)
1000
200
20
0.001
0.01
100
100
0.5
0.2
0.1
0.1
Static Drain to Source on State Resistance
50
20
10
2.0
1.6
1.2
0.8
0.4
10
5
2
1
1
0.1
0
0
25
Operation in this
area is limited by
R
Ta = 25 C
Drain to Source Voltage V
V
Gate to Source Voltage V
V
Pulse Test
DS(on)
Typical Transfer Characteristics
GS
Maximum Safe Operation Area
DS
Tc = 75 C
Case Temperature Tc ( C)
0
= 10 V
= 10 V
2
1
25
I
vs. Temperature
D
= 12 A
DC Operation
(Tc = 25 C)
4
50
10
PW = 10 ms
(1shot)
25 C
75
25 C
6
100 125 150
Pulse Test
6 A
100
8
GS
DS
3 A
(V)
(V)
1000
10