PHB44N06T NXP Semiconductors, PHB44N06T Datasheet - Page 5

• Manufacturer Part Number: PHB44N06T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
ID/A
a = R
gfs/S
I
D
Fig.8. Typical transconductance, T
80
70
60
50
40
30
20
10
2.5
1.5
0.5
20
15
10
= f(V
0
5
0
-100
2
1
0
0
Fig.7. Typical transfer characteristics.
a
DS(ON)
GS
g
10
) ; conditions: V
fs
/R
-50
= f(I
2
DS(ON)25 ˚C
Tj/C = 175
BUK959-60
20
D
); conditions: V
transistor
0
4
30
Tmb / degC
VGS/V
= f(T
50
DS
40
Rds(on) normlised to 25degC
j
6
); I
25
ID/A
= 25 V; parameter T
D
= 20 A; V
50
100
DS
8
= 25 V
60
150
j
= 25 ˚C .
GS
10
70
= 10 V
200
80
12
j
5
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1.5
V
.5
Fig.12. Typical capacitances, C
2
1
0
-100
0.01
5
4
3
2
1
0
I
C = f(V
GS(TO)
D
VGS(TO) / V
0
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
0.1
); conditions: I
0
2%
Tj / C
2
50
1
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
VDS/V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
PHB44N06T
iss
10
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
, C
= V
Rev 1.100
200
GS
rss
100
GS
.
Coss
Crss
Ciss
5