PHB45N03T NXP Semiconductors, PHB45N03T Datasheet - Page 5

• Manufacturer Part Number: PHB45N03T
• Description: Trenchmos Transistor Standard Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
December 1997
TrenchMOS
Standard level FET
Fig.9. Normalised drain-source on-state resistance.
a = R
60
50
40
30
20
10
20
15
10
1.5
0.5
I
0
D
5
0
2
1
0
-100
Fig.8. Typical transconductance, T
0
0
ID / A
= f(V
gfs / S
a
Fig.7. Typical transfer characteristics.
DS(ON)
GS
Tj / C = 25
g
-50
) ; conditions: V
fs
/R
2
= f(I
DS(ON)25 ˚C
D
); conditions: V
20
0
transistor
4
175
= f(T
VGS / V
ID / A
Tj / C
50
DS
j
); I
Tj / C = 25
= 25 V; parameter T
D
6
= 25 A; V
100
DS
40
= 25 V
30V TrenchMOS
j
8
150
= 25 ˚C .
GS
175
7528-30
7528-30
= 10 V
200
10
60
j
5
10000
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
1000
100
V
Fig.12. Typical capacitances, C
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
0.1
D
VGS(TO) / V
0
C / pF
= f(V
Fig.11. Sub-threshold drain current.
max.
min.
typ.
Fig.10. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
); conditions: I
0
1
2%
Tj / C
2
VDS / V
50
j
GS
D
= 25 ˚C; V
typ
= 1 mA; V
= 0 V; f = 1 MHz
Sub-Threshold Conduction
100
3
Product specification
10
PHB45N03T
iss
, C
150
98%
BUK759-60
DS
DS
oss
4
= V
7528-30
, C
= V
Rev 1.200
Ciss
Coss
Crss
200
GS
rss
GS
.
100
5