STQ2NF06L STMicroelectronics, STQ2NF06L Datasheet

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STQ2NF06L

Manufacturer Part Number
STQ2NF06L
Description
N-channel 60v - 0.1 W - 2a To-92 Stripfet?? Ii Power Mosfet
Manufacturer
STMicroelectronics
Datasheet
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(
(1)
October 2003
.
STQ2NF06L
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
AVALANCHE RUGGED TECHNOLOGY
LOW THRESHOLD DRIVE
DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
Related to R
Pulse width limited by safe operating area.
Symbol
dv/dt
E
I
V
P
DM
V
V
AS
T
DGR
tot (1)
I
I
T
GS
stg
DS
TYPE
D
D
j
(
(3)
(2)
thj -l
Drain-source Voltage (V
Drain-gate Voltage (R
Gate- source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
DS
(on) = 0.1
V
60 V
DSS
Parameter
R
<0.12
DS(on)
C
GS
= 25°C
GS
= 20 k )
= 0)
C
C
2 A
= 25° C
= 100°C
I
N-CHANNEL 60V - 0.1
D
STripFET™ II POWER MOSFET
INTERNAL SCHEMATIC DIAGRAM
(2) I
(3) Starting T
SD
2A, di/dt 100A/µs, V
TO-92
j
= 25
-55 to 150
o
Value
C, I
± 16
200
1.2
60
60
2
8
3
8
6
D
= 2A, V
DD
STQ2NF06L
DD
V
(BR)DSS
= 30V
(Ammopack)
- 2A TO-92
TO-92
, T
j
T
JMAX
W/°C
V/ns
Unit
mJ
°C
°C
W
V
V
V
A
A
A
1/9

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STQ2NF06L Summary of contents

Page 1

... October 2003 . N-CHANNEL 60V - 0.1 STripFET™ II POWER MOSFET I DS(on INTERNAL SCHEMATIC DIAGRAM = 25° 100° 25°C C (2) I 2A, di/dt 100A/µ (3) Starting T STQ2NF06L - 2A TO-92 TO-92 TO-92 (Ammopack) Value 60 60 ± 1 200 -55 to 150 (BR)DSS j ...

Page 2

... STQ2NF06L THERMAL DATA Rthj- Thermal Resistance Junction-Lead lead Rthj-amb Thermal Resistance Junction-ambient T Maximum Lead Temperature For Soldering Purpose l ELECTRICAL CHARACTERISTICS (T OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage Zero Gate Voltage I DSS Drain Current ( Gate-body Leakage I GSS Current ( (*) ON Symbol ...

Page 3

... (Resistive Load, Figure 3) Test Conditions Min di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance Junction-lead STQ2NF06L Typ. Max. Unit 5.6 7.6 nC 1.2 nC 2.6 nC Typ. Max. Unit Typ. Max. Unit ...

Page 4

... STQ2NF06L Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics . on Resistance vs Temperature Normalized Normalized Breakdown Voltage vs Temperature. . STQ2NF06L 5/9 ...

Page 6

... STQ2NF06L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... TO-92 MECHANICAL DATA mm DIM. MIN. TYP. A 4.58 B 4.45 C 3.2 D 12.7 E 1.27 F 0.4 G 0.35 inch MAX. MIN. TYP. 5.33 0.180 5.2 0.175 4.2 0.126 0.500 0.050 0.51 0.016 0.14 STQ2NF06L MAX. 0.210 0.204 0.165 0.020 7/9 ...

Page 8

... STQ2NF06L 8/9 ...

Page 9

... All other names are the property of their respective owners. Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 2003 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES www.st.com STQ2NF06L 9/9 ...

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