STQ1NC60R STMicroelectronics, STQ1NC60R Datasheet

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STQ1NC60R

Manufacturer Part Number
STQ1NC60R
Description
N-channel 600v - 12ohm - 0.3a To-92 Powermesh??ii Power Mosfet
Manufacturer
STMicroelectronics
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STQ1NC60R
Manufacturer:
ST
Quantity:
50 000
Part Number:
STQ1NC60R
Manufacturer:
ST
0
Part Number:
STQ1NC60R-AP
Manufacturer:
ST
Quantity:
10 500
Part Number:
STQ1NC60R-AP
Manufacturer:
ST
0
DESCRIPTION
Using the latest high voltage MESH OVERLAY™II
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
ORDERING INFORMATION
July 2003
STQ1NC60R
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
LOW SWITCH MODE POWER SUPPLIES
(SMPS)
BATTERY CHARGER
STQ1NC60R-AP
SALES TYPE
STQ1NC60R
TYPE
DS
(on) = 12
600 V
V
DSS
MARKING
Q1NC60R
Q1NC60R
R
< 15
DS(on)
N-CHANNEL 600V - 12
0.3 A
I
D
PowerMESH™II Power MOSFET
PACKAGE
TO-92
TO-92
INTERNAL SCHEMATIC DIAGRAM
TO-92
BULK
STQ1NC60R
PACKAGING
AMMOPACK
- 0.3A TO-92
(AMMOPACK)
BULK
TO-92
1/9

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STQ1NC60R Summary of contents

Page 1

... APPLICATIONS LOW SWITCH MODE POWER SUPPLIES (SMPS) BATTERY CHARGER ORDERING INFORMATION SALES TYPE MARKING STQ1NC60R Q1NC60R STQ1NC60R-AP Q1NC60R July 2003 N-CHANNEL 600V - 12 PowerMESH™II Power MOSFET R I DS(on) D < 15 0.3 A TO-92 BULK INTERNAL SCHEMATIC DIAGRAM PACKAGE TO-92 TO-92 STQ1NC60R - 0.3A TO-92 TO-92 (AMMOPACK) PACKAGING BULK AMMOPACK 1/9 ...

Page 2

... STQ1NC60R ABSOLUTE MAXIMUM RATINGS Symbol Parameter V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT C Derating Factor dv/dt (1) Peak Diode Recovery voltage slope ...

Page 3

... 4 10V G GS (Inductive Load see, Figure 5) Test Conditions Min 0 di/dt = 100A/µ 150° (see test circuit, Figure 5) Thermal Impedance STQ1NC60R Typ. Max. Unit 0. 108 2.5 Typ. Max. Unit 7 7.3 nC 3.4 nC 2.5 nC Typ ...

Page 4

... STQ1NC60R Output Characteristics . Tranconductance Gate Charge vs Gate-source Voltage 4/9 Transfer Characteristics Static Drain-Source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Thereshold Voltage vs Temp. Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STQ1NC60R 5/9 ...

Page 6

... STQ1NC60R Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... TO-92 MECHANICAL DATA mm. DIM. MIN. TYP A 4.32 b 0.36 D 4.45 E 3.30 e 2.41 e1 1.14 L 12.70 R 2.16 S1 0.92 W 0.41 V 5° inch MAX. MIN. TYP. 4.95 0.170 0.51 0.014 4.95 0.175 3.94 0.130 2.67 0.094 1.40 0.044 15.49 0.50 2.41 0.085 1.52 0.036 0.56 0.016 5° STQ1NC60R MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 7/9 ...

Page 8

... STQ1NC60R DIM. MIN 12.5 P2 5.65 F1, F2 2.44 delta 17.5 W0 5 18 delta P -1 8/9 TO-92 AMMOPACK mm. TYP MAX. MIN. 4.8 3.8 1.6 2.3 0.48 12.7 12.9 0.49 6.35 7.05 0.22 2.54 2.94 0.09 2 -0. 0.69 6 6.3 0.22 9 9.25 0.33 0.5 20.5 0.72 16 16.5 0. 4.2 0.15 0.9 11 0.11 1 -0.04 inch TYP. MAX. 0.19 0.15 0.06 0.09 0.02 0.5 0.51 0.25 0.27 0.1 0.11 0.08 0.71 0.74 0.23 0.24 0.35 0.36 0.02 0.80 0.63 0.65 0.98 0.157 0.16 0.035 0.43 0.04 ...

Page 9

... The ST logo is a registered trademark of STMicroelectronics © 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. © http://www.st.com STQ1NC60R 9/9 ...

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