STY34NB50F STMicroelectronics, STY34NB50F Datasheet

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STY34NB50F

Manufacturer Part Number
STY34NB50F
Description
N - Channel 500v - 0.11ohm - 34 A - Max247 Powermesh Mosfet
Manufacturer
STMicroelectronics
Datasheet

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DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
December 1999
STY34NB50F
Symbol
dv/dt
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
I
V
DM
V
V
P
T
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
stg
DS
GS
D
D
tot
TYPE
( )
j
(1)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
500 V
V
= 0.11
DSS
N - CHANNEL 500V - 0.11 - 34 A - Max247
< 0.14
Parameter
R
DS(on)
c
GS
= 25
GS
= 20 k )
= 0)
o
C
c
c
34 A
= 25
= 100
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
34 A, di/dt
200 A/ s, V
-65 to 150
Max247
Value
21.4
3.61
500
500
136
450
150
4.5
STY34NB50F
34
30
DD
V
(BR)DSS
1
2
MOSFET
, T
3
j
T
JMAX
W/
V/ns
Unit
o
o
W
V
V
V
A
A
A
C
C
o
C
1/8

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STY34NB50F Summary of contents

Page 1

... Pulse width limited by safe operating area December 1999 PowerMESH I DS(on INTERNAL SCHEMATIC DIAGRAM = 100 di/ STY34NB50F MOSFET Max247 Value Unit 500 V 500 21.4 A 136 A 450 W o 3.61 W/ 4.5 V/ns o -65 to 150 ...

Page 2

... STY34NB50F THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS o (starting ELECTRICAL CHARACTERISTICS (T ...

Page 3

... G GS (see test circuit, figure 5) Test Conditions di/dt = 100 100 150 DD j (see test circuit, figure 5) Thermal Impedance STY34NB50F Min. Typ. Max 140 196 38 61 Min. Typ. Max Min. Typ. Max. 34 136 1.6 ...

Page 4

... STY34NB50F Output Characteristics Transconductance Gate Charge vs Gate-source Voltage 4/8 Transfer Characteristics Static Drain-source On Resistance Capacitance Variations ...

Page 5

... Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Normalized On Resistance vs Temperature STY34NB50F 5/8 ...

Page 6

... STY34NB50F Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... Max247 MECHANICAL DATA mm DIM. MIN. TYP. A 4.70 A1 2.20 b 1.00 b1 2.00 b2 3.00 c 0.40 D 19.70 e 5.35 E 15.30 L 14.20 L1 3.70 inch MAX. MIN. TYP. 5.30 2.60 1.40 2.40 3.40 0.80 20.30 5.55 15.90 15.20 4.30 STY34NB50F MAX. P025Q 7/8 ...

Page 8

... STY34NB50F Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice ...

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