STH165N10F4-2 STMicroelectronics, STH165N10F4-2 Datasheet - Page 5

• Manufacturer Part Number: STH165N10F4-2
• Description: N-channel 100 V, 4.1 M? , 160 A To-220, H2pak Stripfet? Deepgate? Power Mosfet
• Manufacturer: STMicroelectronics

STH165N10F4-2, STP165N10F4
Table 7.
1. For TO-220
2. For H²PAK
3. Pulse width limited by safe operating area.
4. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Symbol
I
V
SDM
I
SD
RRM
I
Q
SD
t
rr
rr
(4)
(3)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
Doc ID 15781 Rev 1
I
I
V
di/dt = 100 A/µs,
T
(see Figure 4)
SD
SD
j
DD
= 150 °C
= 120 A, V
= 120 A,
= 25 V
Test conditions
GS
= 0
Electrical characteristics
Min.
-
-
-
-
Typ.
TBD
TBD
TBD
120
160
480
640
Max.
TBD
(1)
(2)
(1)
(2)
Unit
nC
ns
5/12
A
A
V
A