BF820W NXP Semiconductors, BF820W Datasheet - Page 3

• Manufacturer Part Number: BF820W
• Description: Npn High-voltage Transistors
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
THERMAL CHARACTERISTICS
Note
1.
CHARACTERISTICS
T
Note
1. Pulse test: t
2003 Sep 09
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
C
f
SYMBOL
SYMBOL
SYMBOL
C
CM
BM
j
CBO
EBO
T
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
th j-a
= 25 C unless otherwise specified.
re
NPN high-voltage transistor
Transistor mounted on an FR4 printed-circuit board.
Transistor mounted on an FR4 printed-circuit board.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
p
300 s;
PARAMETER
PARAMETER
PARAMETER
0.02.
I
I
I
I
I
I
I
E
E
C
C
C
C
C
= 0; V
= 0; V
= 0; V
= 25 mA; V
= 30 mA; I
= i
= 10 mA; V
open emitter
open base
open collector
T
amb
c
= 0; V
CB
CB
EB
note 1
3
25 C; note 1
= 200 V
= 200 V; T
= 5 V
CONDITIONS
CB
B
CONDITIONS
CE
CE
= 5 mA; note 1
= 30 V; f = 1 MHz
CONDITIONS
= 20 V
= 10 V; f = 100 MHz
j
= 150 C
50
60
65
65
MIN.
MIN.
VALUE
625
Product specification
300
300
5
50
100
50
200
+150
150
+150
10
10
50
600
1.6
MAX.
MAX.
BF820W
UNIT
K/W
V
V
V
mA
mA
mA
mW
nA
nA
mV
pF
MHz
C
C
C
A
UNIT
UNIT