NESG3031M14 Renesas Electronics Corporation., NESG3031M14 Datasheet

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NESG3031M14

Manufacturer Part Number
NESG3031M14
Description
Npn Silicon Germanium Rf Transistor
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NESG3031M14-T3-A
Manufacturer:
TI
Quantity:
238
Part Number:
NESG3031M14-T3-A
Manufacturer:
NEC
Quantity:
20 000
Document No. PU10415EJ03V0DS (3rd edition)
Date Published February 2006 CP(K)
Printed in Japan
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
• Maximum stable power gain: MSG = 15.0 dB TYP. @ V
• SiGe HBT technology (UHS3) adopted: f
• 4-pin lead-less minimold (M14, 1208 PKG)
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NESG3031M14
NESG3031M14-T3
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
NF = 0.6 dB TYP., G
NF = 0.95 dB TYP., G
NF = 1.1 dB TYP., G
Part Number
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
your nearby sales office.
Unit sample quantity is 50 pcs.
Parameter
NESG3031M14-A
NESG3031M14-T3-A
Order Number
a
a
4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
a
= 16.0 dB TYP. @ V
= 9.5 dB TYP. @ V
= 10.0 dB TYP. @ V
LOW NOISE, HIGH-GAIN AMPLIFICATION
2
× 1.0 mm (t) glass epoxy PWB
NPN SiGe RF TRANSISTOR FOR
Symbol
NPN SILICON GERMANIUM RF TRANSISTOR
P
V
V
V
T
tot
CBO
CEO
EBO
I
T
C
stg
The mark
Note
j
4-pin lead-less minimold
(M14, 1208 PKG)
(Pb-Free)
A
max
CE
= +25°C)
CE
CE
= 110 GHz
= 2 V, I
DATA SHEET
= 2 V, I
Package
= 2 V, I
Note
shows major revised points.
−65 to +150
C
Ratings
C
= 6 mA, f = 5.8 GHz
12.0
C
150
150
4.3
1.5
= 6 mA, f = 2.4 GHz
35
= 6 mA, f = 5.2 GHz
CE
= 3 V, I
50 pcs (Non reel)
10 kpcs/reel
C
Quantity
= 20 mA, f = 5.8 GHz
NESG3031M14
Unit
mW
mA
°C
°C
V
V
V
• 8 mm wide embossed taping
• Pin 1 (Collector), Pin 4 (Emitter) face
NEC Compound Semiconductor Devices, Ltd. 2003, 2006
the perforation side of the tape
Supplying Form

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NESG3031M14 Summary of contents

Page 1

... Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10415EJ03V0DS (3rd edition) Date Published February 2006 CP(K) Printed in Japan DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M14 = mA 2.4 GHz mA 5.2 GHz ...

Page 2

... GHz Sopt L Lopt mA (set 5.8 GHz Sopt L Lopt µ s, Duty Cycle ≤ 2% Data Sheet PU10415EJ03V0DS NESG3031M14 MIN. TYP. MAX. Unit − − 100 nA − − 100 nA − 220 300 380 − 6.5 9.0 dB − − 0.6 dB − ...

Page 3

... 0.1 0.01 0.001 0.0001 0.00001 0.9 1.0 0.4 (V) BE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0.9 1.0 0 (V) BE Data Sheet PU10415EJ03V0DS NESG3031M14 MHz Collector to Base Voltage V (V) CB 0.5 0.6 0.7 0.8 0.9 1.0 Base to Emitter Voltage V (V) BE µ µ 200 A 180 A µ 160 A µ 140 A µ ...

Page 4

... GHz 100 1 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz 100 1 Data Sheet PU10415EJ03V0DS NESG3031M14 100 Collector Current I (mA 100 Collector Current I (mA 100 Collector Current I (mA) C ...

Page 5

... 100 1 INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 100 1 Data Sheet PU10415EJ03V0DS NESG3031M14 MAG MAG MSG 21e 10 100 Frequency f (GHz 2.4 GHz MSG MAG ...

Page 6

... INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 5.8 GHz –5 100 1 Data Sheet PU10415EJ03V0DS NESG3031M14 5.2 GHz MSG MAG 21e 10 100 Collector Current I (mA 5.8 GHz MSG MAG ...

Page 7

... Input Power P NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT 100 1 Collector Current I Data Sheet PU10415EJ03V0DS NESG3031M14 out – (dBm 5.8 GHz ...

Page 8

... PACKAGE DIMENSIONS 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) (UNIT: mm) 8 1.0±0.05 +0.07 0.8 –0.05 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Data Sheet PU10415EJ03V0DS NESG3031M14 ...

Page 9

... NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10415EJ03V0DS NESG3031M14 Not all The M8E 00 0110 9 ...

Page 10

... TEL: +886-2-8712-0478 Taipei Branch Office TEL: +82-2-558-2120 Korea Branch Office NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NESG3031M14 0504 ...

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