NESG3031M14 Renesas Electronics Corporation., NESG3031M14 Datasheet - Page 4

• Manufacturer Part Number: NESG3031M14
• Description: Npn Silicon Germanium Rf Transistor
• Manufacturer: Renesas Electronics Corporation.

4
Remark The graphs indicate nominal characteristics.
1 000
1 000
100
100
10
10
30
25
20
15
10
5
0
0.1
0.1
1
V
f = 2 GHz
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
Collector Current I
1
1
10
C
C
C
10
10
(mA)
(mA)
(mA)
V
V
CE
CE
= 1 V
= 3 V
Data Sheet PU10415EJ03V0DS
100
100
100
1 000
100
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
0.1
1
1
V
f = 2 GHz
V
f = 2 GHz
CE
CE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
= 1 V
= 3 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current I
Collector Current I
Collector Current I
1
10
10
NESG3031M14
C
C
C
10
(mA)
(mA)
(mA)
V
CE
= 2 V
100
100
100