TN8 STMicroelectronics, TN8 Datasheet - Page 4

• Manufacturer Part Number: TN8
• Description: 8a Scrs
• Manufacturer: STMicroelectronics

TN8, TS8 and TYNx08 Series
Figure 3: Average and D.C. on-state current
versus ambient temperature (device mounted
on FR4 with recommended pad layout) (DPAK)
Figure
impedance junction to ambient versus pulse
duration (recommended pad layout, FR4 PC
board for DPAK)
Figure 7: Relative variation of gate trigger
current and holding current versus junction
temperature for TN8 & TYN08 series
4/10
1.00
0.10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
I
H
& I
-20
(A)
th(j-a)
L
5:
I
GT
j
α = 180°
25
/R
1E-1
0
Relative
I
th(j-a)
GT H L
,I ,I [T =25°C]
D.C.
20
]
50
DPAK
1E+0
j
T
40
T (°C)
amb
t (s)
j
p
variation
(°C)
TO-220AB / IPAK
60
75
1E+1
80
of
100
100
1E+2
thermal
120
5E+2
125
140
Figure
impedance junction to case versus pulse
duration
Figure 6: Relative variation of gate trigger
current and holding current versus junction
temperature for TS8 series
Figure 8: Relative variation of holding current
versus
values) for TS8 series
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
0.5
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1E-2
-40
1E-3
I [R
K=[Z
H
I
GT H L
,I ,I [T ] /
GK
th(j-c)
-20
R
GK
I
] / I [
H
4:
& I
= 1k
gate-cathode
I
GT
L
H
/R
Ω
j
R
th(j-c)
0
Relative
GK
I
GT H L
=1k ]
,I ,I [T =25°C]
1E-1
]
1E-2
20
Ω
j
R
40
T (°C)
GK
t (s)
p
j
variation
(k )
Ω
60
resistance
1E+0
1E-1
80
100
of
T
j
thermal
= 25°C
120
(typical
1E+0
1E+1
140