VEC2819 Sanyo Semiconductor Corporation, VEC2819 Datasheet
VEC2819
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VEC2819 Summary of contents
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... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN VEC2819 SANYO Semiconductors MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode ...
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... Anode Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 VEC2819 Symbol Conditions FSM 50Hz sine wave, 1 cycle Tj Tstg Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--20V =0V I GSS V GS =±8V = (off =--10V -1mA ...
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... Drain-to-Source Voltage (on 160 140 120 100 --1 --2 --3 --4 --5 Gate-to-Source Voltage VEC2819 t rr Test Circuit [SBD] Duty≤10% V OUT 10µs VEC2819 [MOSFET] --0.6 --0.7 --0.8 --0.9 --1.0 IT11954 [MOSFET] 160 Ta=25 ° C 140 120 100 --6 --7 --8 --9 --10 IT11827 50Ω 100Ω 10Ω --5V ...
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... Drain Current --4 --10V --3A --4.0 --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C VEC2819 [MOSFET] -- --10V --1 --0 --0. --0.001 --0.2 --0.3 --10 IT06420 [MOSFET --10V --4 ...
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... Reverse Voltage FSM -- t 14 Current waveform 50Hz sine wave 0. 0 Time VEC2819 [SBD] 100 0.001 ...
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... Note on usage : Since the VEC2819 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...