UNR411M Panasonic Corporation of North America, UNR411M Datasheet - Page 2

• Manufacturer Part Number: UNR411M
• Description: Silicon Pnp Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

UNR411x Series
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
cutoff current UNR4113
(Collector open) UNR4112/4114/411D/
Forward current UNR4118/411L
transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance UNR4118
2. * : Rank classification
Parameter
Rank
UNR4110/4115/4116/4117
411E/411M/411N
UNR4111
UNR411F/411H
UNR4119
UNR4118/411L
UNR4119/411D/411F/411H
UNR4111
UNR4112/411E
UNR4113/4114/411M
UNR411N
UNR4110
4117
UNR4113
UNR411D
UNR411E
UNR4119
UNR411H/411M
UNR4116/411F/411L/411N
UNR4111/4114/4115
UNR4112/4117
UNR4110/4113/411D/411E
h
FE
*
*
/4115
160 to 260
*
/4116
Q
*
/
a
= 25°C ± 3°C
Symbol
V
V
V
I
I
I
V
V
CE(sat)
h
210 to 340
CBO
CEO
EBO
R
f
CBO
CEO
FE
OH
OL
T
1
R
I
I
V
V
V
V
I
V
V
V
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00018DED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −10 V, I
290 to 460
S
Conditions
B
C
E
B
B
B
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −10 V, R
= −6 V, R
= −5 mA
= − 0.3 mA
= −2.5 V, R
= −3.5 V, R
= 0
= 0
= 1 mA, f = 200 MHz
160 to 460
No-rank
L
L
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
Min
−50
−50
160
20
30
35
60
80
80
0.51
Typ
1.0
2.2
4.7
80
10
22
47
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
− 0.5
− 0.2
Max
−1.0
−1.5
−2.0
400
460
MHz
Unit
mA
µA
µA
kΩ

V
V
V
V
V