UNR411M Panasonic Corporation of North America, UNR411M Datasheet - Page 3

• Manufacturer Part Number: UNR411M
• Description: Silicon Pnp Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Resistance ratio UNR411M
Common characteristics chart
Characteristics charts of UNR4110
−120
−100
400
300
200
100
−80
−60
−40
−20
0
0
0
0
I
Collector-emitter voltage V
B
Ambient temperature T
= −1.0 mA
− 0.9 mA
−2
− 0.8 mA
40
Parameter
−4
UNR411N
UNR4118/4119
UNR4114
UNR411H
UNR411F
UNR4111/4112/4113/411L
UNR411E
UNR411D
I
P
C
− 0.7 mA
T
 V
 T
80
−6
− 0.6 mA
CE
− 0.5 mA
a
−8
− 0.4 mA
120
T
a
a
− 0.2 mA
− 0.1 mA
− 0.3 mA
(°C)
= 25°C
−10
CE
( V )
160
−12
Symbol
R
1
/R
− 0.01
−100
− 0.1
−10
2
−1
−0.1
Collector current I
−25°C
a
SJH00018DED
= 25°C ± 3°C
V
−1
CE(sat)
25°C
Conditions
 I
T
−10
a
C
= 75°C
C
I
( mA )
C
/ I
B
= 10
−100
400
300
200
100
0
0.08
0.17
0.17
0.37
1.70
−1
Min
0.8
3.7
Collector current I
UNR411x Series
0.047
0.10
0.21
0.22
0.47
2.14
Typ
0.1
1.0
4.7
−10
h
FE
 I
Max
0.12
0.25
0.27
0.57
2.60
1.2
5.7
−100
C
T
C
a
V
25°C
−25°C
= 75°C
( mA )
CE
= –10 V
Unit

−1 000
3