BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 4

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BB502M

Manufacturer Part Number
BB502M
Description
Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Rev.5.00 Aug 10, 2005 page 4 of 10
L1:
L3:
900MHz Power Gain, Noise Figure Test Circuit
Input (
10
50Ω)
21
29
L1
C4 to C6
C1, C2
R1
C4
V
G1
L2
C3
R1
R2
R3
C1
:
:
:
:
:
:
V
G2
G1
G2
C5
R2
Variable Capacitor (10pF MAX)
Disk Capacitor (1000pF)
Air Capacitor (1000pF)
180 k
47 k
4.7 k
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
C3
L4:
L2:
D
R3
S
V
D
C6
L3
RFC
26
18
C2
L4
Output (
50Ω)
(φ1mm Copper wire)
Unit: mm

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