BB502M Renesas Electronics Corporation., BB502M Datasheet - Page 8

• Manufacturer Part Number: BB502M
• Description: Mosfets Built In Biasing Circuit Mos Fet Ic Uhf Rf Amplifier
• Manufacturer: Renesas Electronics Corporation.

Rev.5.00 Aug 10, 2005 page 8 of 10
180°
0
–.2
Test Condition;
.2
–150°
Test Condition:
150°
–.4
50 to 1000 MHz (50 MHz step)
.4
S11 Parameter vs. Frequency
S12 Parameter vs. Frequency
50 to 1000 MHz (50 MHz step)
.2
–120°
–.6
120°
.6
.4
–.8
V
V
Zo = 50Ω
V
V
Zo = 50Ω
.8
.6 .8 1
DS
G2S
DS
G2S
= 5 V , V
–1
= 5 V , V
1
= 4 V , R
–90°
= 4 V , R
90°
1.5
–1.5
G1
2
G1
1.5
G
Scale: 0.002 / div.
G
= 5 V
= 180 kΩ ,
= 5 V
3 4 5
= 180 kΩ ,
–60°
60°
–2
2
3
10
–3
4
–4
5
–5
–30°
10
–10
30°
0°
180°
–150°
150°
Test Condition:
0
–.2
Test Condition:
.2
50 to 1000 MHz (50 MHz step)
S22 Parameter vs. Frequency
S21 Parameter vs. Frequency
–.4
50 to 1000 MHz (50 MHz step)
.4
–120°
120°
.2
–.6
.6
.4
V
V
Zo = 50Ω
DS
G2S
V
V
Zo = 50Ω
–.8
DS
G2S
.8
.6 .8 1
–90°
= 5 V , V
90°
= 4 V , R
= 5 V , V
–1
= 4 V , R
1
1.5
Scale: 1 / div.
G1
G
G1
–1.5
–60°
2
G
= 5 V
60°
= 180 kΩ ,
1.5
= 5 V
= 180 kΩ ,
3 4 5
–2
2
–30°
30°
3
10
–3
4
–4
0°
5
–5
10
–10