DE475-102N20A IXYS Corporation, DE475-102N20A Datasheet
DE475-102N20A
Related parts for DE475-102N20A
DE475-102N20A Summary of contents
Page 1
... JM ≤ DSS >200 1800 730 4.5 0.08 0.20 Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 1000 2.5 ±100 -55 +150 150 -55 +150 300 3 DE475-102N20A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns V/ns W GATE W W C/W ...
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... J min. typ. max. 0.3 5600 , 175 160 50 70 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 20 120 JM 1.5 200 0.6 14 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE475-102N20A RF Power MOSFET Ω µC A ...
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... DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS of the device, Rds is the resistive leakage term. DE475-102N20A RF Power MOSFET are mod- RSS Doc #9200-0238 Rev 4 © 2003 IXYS RF ...