VND670 STMicroelectronics, VND670 Datasheet - Page 8

• Manufacturer Part Number: VND670
• Description: Dual High Side Switch With Dual Power Mos Gate Driver Bridge Configuration
• Manufacturer: STMicroelectronics

VND670SP
ELECTRICAL TRANSIENT REQUIREMENTS
8/14
1
Test Pulse
Test Pulse
ISO T/R
ISO T/R
7637/1
7637/1
Class
3a
3b
3a
3b
1
2
4
5
1
2
4
5
C
E
All functions of the device are performed as designed after exposure to disturbance.
One or more functions of the device are not performed as designed after exposure to disturbance
and cannot be returned to proper operation without replacing the device.
Test Levels Result
Test Level
+26.5V
+25V
+25V
-25V
-25V
-4V
I
C
C
C
C
C
C
I
Test Level
+46.5V
+50V
+50V
-50V
-50V
-5V
II
Test Levels Result
Test Level
C
C
C
C
C
E
II
+66.5V
-100V
+75V
+75V
-75V
-6V
III
Contents
Test Levels Result
Test Level
+86.5V
+100V
+100V
-100V
-150V
-7V
IV
III
C
C
C
C
C
E
Delays and Impedance
100ms, 0.01
Test Levels
Test Levels Result
0.2ms, 10
0.1 s, 50
0.1 s, 50
400ms, 2
2ms, 10
IV
C
C
C
C
C
E