CHA6518 United Monolithic Semiconductors, CHA6518 Datasheet

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CHA6518

Manufacturer Part Number
CHA6518
Description
5 ? 18 Ghz High Power Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CHA6518
Manufacturer:
UMS
Quantity:
1 400
Part Number:
CHA6518-99F
Manufacturer:
UMS
Quantity:
1 400
Part Number:
CHA6518-99F
Manufacturer:
UMS
Quantity:
20 000
Description
The CHA6518 is a monolithic three-stage
GaAs high power amplifier designed for
wide band applications.
This device is manufactured using a UMS
0.25 µm Power pHEMT process, including,
via holes through the substrate and air
bridges.
Main Characteristics
Tamb = +25°C (Tamb is the back-side of the chip)
To simplify the assembly process:
Symbol
P_sat
Ref. : DSCHA65185007 - 7 Jan 05
F_op
G_lin
the backside of the chip is both RF and
DC grounded
bond pads and back side are gold plated
for compatibility with eutectic die attach
method
thermocompression bonding process.
50
Operating frequency range
Saturated output power
Linear gain
IN
and
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
matching
5 – 18 GHz High Power Amplifier
Input
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
thermosonic
GaAs Monolithic Microwave IC
Vg
United Monolithic Semiconductors S.A.S.
Parameter
Vd
Inter -
stage
Stage 1 /
Stage 2
or
1/8
Vg
Vg
Vd = 8 V
Vd
Vd
Main Features
n 0.25 µm Power pHEMT Technology
n 5 – 18 GHz Frequency Range
n 2W Output Power
n 24 dB nominal Gain
n Quiescent Bias point : 8V ; 1A
n Chip size: 5.23 mm x 3.26 mm x
Inter -
stage
Stage 2 /
Stage 3
Specifications subject to change without notice
0.07 mm
Min
5
Vg
Vg
Vd
Vd
33.5
Typ
24
combiner
Output
RoHS COMPLIANT
CHA6518
OUT
Max
50
18
dBm
Unit
GHz
dB

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CHA6518 Summary of contents

Page 1

... F_op Operating frequency range P_sat Saturated output power G_lin Linear gain Ref. : DSCHA65185007 - 7 Jan 05 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 Main Features n 0.25 µm Power pHEMT Technology n 5 – 18 GHz Frequency Range ...

Page 2

... Tstg Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) These values are specified for Tamb = 25°C Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Parameter Parameter 2/8 Specifications subject to change without notice ...

Page 3

... Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 CHA6518 : Maximum Output Power @ 25° Freq (GHz) CHA6518 : Power Added Efficieny @ 25° Freq (GHz) 3/8 CHA6518 ...

Page 4

... GHz High Power Amplifier CHA6518 : Gain @ Pin=-5dBm & Pin=13dBm Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Freq (GHz) 4/8 CHA6518 Gain(dB) @ Pin=-5dBm ...

Page 5

... GHz High Power Amplifier CHA6518 : Noise Figure @ 25° Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Freq (GHz) 5/8 CHA6518 ...

Page 6

... DC pads (6, 12) = 268 pads 15 = 280 pads (8, 10) = 188 x 96 Pin number 12 7,11 10 Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 7

... The RF, DC and modulation port inter-connections should be done according to the following table: Port IN (17) OUT ( 10, 13) VG (3, 6, 12, 15) Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 8

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. DSCHA65185007 - 7 Jan 05 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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