CHA6517 United Monolithic Semiconductors, CHA6517 Datasheet
CHA6517
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CHA6517 Summary of contents
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... Tamb = +25° C (Tamb is the back-side of the chip) Symbol Parameter F_op Operating frequency range Psat Saturated output power G_lin Linear gain Ref. : DSCHA6517-8205 - 25 Jun 08 United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0 Fax : +33 (0 channel wide band INPUT A INPUT B ...
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... Storage temperature range (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) These values are specified for Tamb = 25° C Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Parameter ...
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... X-band High Power Amplifier Typical measured characteristics On Wafer Measurements, S parameters (one channel): Tamb=25° C, Vd=8V, Id (Quiescient) = 0.6A, pulsed mo de: Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Gain Input and Output Return losses 3/10 Specifications subject to change without notice CHA6517 www ...
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... CHA6517 On Wafer Measurements (one channel): Tamb=25° C, Vd=8V, Id (Quiescient) = 0.6A, Pin=11dBm , pulsed mode: Output Power versus Frequency Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Id versus Pin 4/10 Specifications subject to change without notice www ...
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... Vd=8V, Id (Quiescient) = 0.6A, S parameters, CW mode: Gain versus Frequency and Temperature (-40° C, +25° C and +70° C) Input and Output Return losses versus Frequency and Temperature Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Temp= +70° C ...
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... Output power versus Frequency and Temperature (Pin=+12dBm) Pin=-5dBm Pin=+15dBm Gain versus Frequency and Input power (Temp.=+25° C) Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier Temp.=-40° C Temp.=+70° ...
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... X-band High Power Amplifier Output power versus Frequency and Temperature (Freq=18GHz) Id current versus Frequency and Temperature (Pin=+17dBm) Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Temp.=-40° C Temp.=+25° C Temp.=+25° C Temp.=+70° C ...
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... HF pads (1, 7, 16, 22) = 118 x 196 DC pads = Pin number 19 10, 11, 12, 13, 15 Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 X-band High Power Amplifier 3 770 ...
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... The RF and DC connections should be done according to the following table: Port IN (1, 22) OUT (7, 16) VD (6, 8, 10, 11, 12, 13 19, 20, 21) Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 Connection Inductance (Lbonding) = 0.3nH Inductance (Lbonding) = 0.3nH Inductance ...
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... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHA6517-8205 - 25 Jun 08 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...