CHA6517 United Monolithic Semiconductors, CHA6517 Datasheet - Page 2

• Manufacturer Part Number: CHA6517
• Description: 6 - 18 GHz High Power Amplifier
• Manufacturer: United Monolithic Semiconductors

Electrical Characteristics
Tamb = 25° C (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel
Absolute Maximum Ratings (1)
Ref. : DSCHA6517-8205 - 25 Jun 08
CHA6517
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
(1)
(2)
Symbol
PAE_sat
RL_out
RL_in
G_lin
F_op
Psat
Top
Vd
Vg
Id
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Symbol
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25° C
Pin (2)
Vd (2)
Pd (2)
Id (2)
Tstg
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Tj
Operating frequency
Linear gain (Pin=-5dBm)
Input Return Loss
Output Return Loss
Saturated output power (Pin=11dBm)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Maximum Input power
Positive supply voltage without RF power
Positive supply quiescent current
Power dissipation
Junction temperature
Storage temperature range
Parameter
Parameter
2/10
X-band High Power Amplifier
Specifications subject to change without notice
Min
-40
19
30
6
-55 to +125
Values
13.5
175
8.5
Typ
-0.4
19
-14
0.6
22
32
15
1
-8
8
Max
+70
18
-8
-4
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dBm
Unit
° C
° C
W
V
A
dBm
Unit
GHz
dB
dB
dB
° C
%
V
A
V