cha2093 United Monolithic Semiconductors, cha2093 Datasheet

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cha2093

Manufacturer Part Number
cha2093
Description
20-30ghz Low Noise Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cha2093-99F
Manufacturer:
UMS
Quantity:
1 400
Part Number:
cha2093-99F
Manufacturer:
UMS
Quantity:
20 000
Description
The CHA2093 is a two-stage wide band
monolithic low noise amplifier.
The circuit is manufactured with a standard
HEMT process : 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
It is supplied in chip form.
Main Features
¦ Broad band performance 20-30GHz
¦ 2.2dB noise figure, 20-30GHz
¦ 15dB gain,
¦ Low DC power consumption, 50mA
¦ 20dBm 3rd order intercept point
¦ Chip size : 1.67 x 1.03 x 0.1mm
Main Characteristics
Tamb = +25°C
ESD Protections : Electrostatic discharge sensitive device observe handling precautions !
Symbol
Ref. : DSCHA20933279 - 06 Oct 03
NF
G
G
Gain
Gain flatness
Noise figure, 20-30GHz
0.5dB gain flatness
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
20-30GHz Low Noise Amplifier
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
GaAs Monolithic Microwave IC
United Monolithic Semiconductors S.A.S.
Parameter
1/8
IN
20
18
16
14
12
10
8
6
4
2
0
10
Specifications subject to change without notice
On wafer typical measurements.
Min
15
13
Vg 1
20
Typ
2.2
15
0.5
50
RoHS COMPLIANT
Vg 2
25
CHA2093
Max
3.0
30
25
1.0
Frequency ( GHz )
Vd
35
Unit
dB
dB
dB
40
10
9
8
7
6
5
4
3
2
1
0
OUT

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cha2093 Summary of contents

Page 1

... Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2093 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography supplied in chip form. ...

Page 2

... Operating temperature range Tstg Storage temperature range (1) Operation of this device above anyone of these paramaters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Parameter ...

Page 3

... Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 MS12 PS12 MS21 dB ° dB -62.29 -138.5 4.35 -58.39 -130.1 7.36 -53.05 -130.3 9.77 -49.08 -146.8 11.61 -46.97 -163.9 12.9 -44.52 173.2 13.86 -42.23 160.2 14.55 -40.43 138.2 15 -39.41 126.2 15 ...

Page 4

... Typical Gain and Noise Figure measurements on wafer. Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier DBS11 DBS22 ...

Page 5

... Typical Output Power and Gain measurements in test jig Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 F=20GHz - Input power (dBm) F=30GHz Input power (dBm) ...

Page 6

... CHA2093 Typical Chip Assembly IN To Vg1 DC Gate supply feed Mechanical data Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 20-30GHz Low Noise Amplifier Drain supply feed 100pF 7034 25 50 100pF 100pF To Vg2 DC Gate supply feed ...

Page 7

... The first step to bias the amplifier is to tune the Vg1 =-1V and Vg2 to drive 30mA for the full amplifier. Then Vg1 is reduced to obtain current through the amplifier. Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

Page 8

... United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA20933279 - 06 Oct 03 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0 Fax : +33 (0 ...

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