cha2093 United Monolithic Semiconductors, cha2093 Datasheet - Page 2

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cha2093

Manufacturer Part Number
cha2093
Description
20-30ghz Low Noise Amplifier
Manufacturer
United Monolithic Semiconductors
Datasheet

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CHA2093
Electrical Characteristics
Tamb = +25°C, Vd = +4V Id=45mA
Absolute Maximum Ratings
Tamb = +25°C
VSWRout Ouput VSWR (1)
VSWRin
Symbol
Symbol
(1) These values are representative of on-wafer measurements that are made without bonding
(1) Operation of this device above anyone of these paramaters may cause permanent damage.
(2) Duration < 1s.
P1dB
wires at the RF ports.When the chip is attached with typical 0.15nH input and output
bonding wires , the indicated parameter values should be improved.
Ref. : DSCHA20933279 - 06 Oct 03
Tstg
Fop
Top
IP3
Pin
NF
Vd
Id
G
G
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Operating frequency range
Gain (1)
Gain flatness (1)
Input VSWR (1)
3rd order intercept point
Drain bias current
Noise figure (1)
Output power at 1dB gain compression
Drain bias voltage
Maximum peak input power overdrive (2)
Operating temperature range
Storage temperature range
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Parameter
Parameter
(1)
2/8
20-30GHz Low Noise Amplifier
Specifications subject to change without notice
Min
20
13
-55 to +125
-40 to +85
Values
+10
5.0
Typ
2.2
15
20
13
50
0.5
3.0:1
3.0:1
Max
3.0
30
1.0
dBm
Unit
°C
°C
V
dBm
dBm
Unit
Ghz
mA
dB
dB
dB

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