CHA6518 United Monolithic Semiconductors, CHA6518 Datasheet - Page 2

• Manufacturer Part Number: CHA6518
• Description: 5 ? 18 Ghz High Power Amplifier
• Manufacturer: United Monolithic Semiconductors

5 – 18 GHz High Power Amplifier
Ref. DSCHA65185007 - 7 Jan 05
Electrical Characteristics
Tamb = 25°C (2), Vd=8V, Ic (Quiescient) = 1A, CW biasing mode
Absolute Maximum Ratings (1)
(1) This parameter is fixed by gate voltage Vg
(2) The reference is the back-side of the chip
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
(1)
(2)
Symbol
PAE_sat
P_sat_1
P_sat_2
P_sat_3
P_sat_4
P_sat_5
P_sat_6
P_sat_7
Symbol
G_lin_T
G_lin_1
RL_out
Pin (2)
Vd (2)
Pd (2)
RL_in
Id (2)
Ig (2)
F_op
Top
Tstg
NF
Vd
Vg
Id
Tel.: [phone] - Fax : [phone]
Tj
Operation of this device above anyone of these parameters may cause permanent damage.
These values are specified for Tamb = 25°C
Operating frequency
Linear gain
Linear gain variation versus temperature
Input Return Loss
Output Return Loss
Saturated output power (5 to 6 GHz)
Saturated output power (6 to 7 GHz)
Saturated output power (8 to 10 GHz)
Saturated output power (11 to 12 GHz)
Saturated output power (13 to 14 GHz)
Saturated output power (15 to 17 GHz)
Saturated output power (18 GHz)
Power Added Efficiency in saturation
Positive supply voltage
Power supply quiescent current (1)
Negative supply voltage
Operating temperature range (2)
Noise Figure
Input continuous power
Positive supply voltage without RF power
Positive supply quiescent current
Gate supply current
Power dissipation
Junction temperature
Storage temperature range
Parameter
Parameter
2/8
Specifications subject to change without notice
32.5
32.5
32.5
Min
5.5
3.5
-30
-55 to +125
20
33
32
33
32
11
5
Values
13.5
175
1.5
17
88
9
-0.045
32.5
32.5
Typ
-0.8
24
10
10
33
34
33
33
34
20
CHA6518
8
1
5
Unit
dBm
mA
Max
+80
°C
°C
W
V
A
18
dB/°C
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Unit
GHz
dB
dB
dB
°C
dB
%
V
A
V