CAT24C05 Catalyst Semiconductor, CAT24C05 Datasheet - Page 2

• Manufacturer Part Number: CAT24C05
• Description: 4-kb I?c Cmos Serial Eeprom With Partial Array Write Protection
• Manufacturer: Catalyst Semiconductor

ABSOLUTE MAXIMUM RATINGS
RELIABILITY CHARACTERISTICS
D.C. OPERATING CHARACTERISTICS
V
PIN IMPEDANCE CHARACTERISTICS
V
Note:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
(4) Page Mode, V
(5) When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull-down is relatively strong;
Doc. No. 1116, Rev. B
CAT24C03/05
Storage Temperature
Voltage on Any Pin with Respect to Ground
Symbol Parameter
CC
CC
Symbol
Symbol
N
C
C
I
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this speci-
fication is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
undershoot to no less than -1.5 V or overshoot to no more than V
and JEDEC test methods.
therefore the external driver must be able to supply the pull-down current when attempting to drive the input HIGH. To conserve power,
as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
I
V
V
I
END
T
WP
CCW
V
CCR
I
V
= 1.8 V to 5.5 V, T
= 1.8 V to 5.5 V, T
SB
I
OL1
OL2
IN
IN
DR
L
IH
IL
(3)
(3)
(5)
(4)
Endurance
Data Retention
Parameter
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
Parameter
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current
CC
= 5 V, 25°C
A
A
= -40°C to 85°C, unless otherwise specified.
= -40°C to 85°C, unless otherwise specified.
(1)
(3)
(2)
Test Conditions
Read, f
Write, f
All I/O Pins at GND or V
Pin at GND or V
V
V
Conditions
V
V
V
V
V
V
CC
CC
IN
IN
IN
IN
IN
IN
CC
= 0 V
= 0 V
< V
< V
< V
> V
2
≥
< 2.5 V, I
+ 1.5 V, for periods of less than 20 ns.
1,000,000
2.5 V, I
SCL
SCL
IH,
IH,
IH,
IH
Min
100
V
V
V
= 400 kHz
= 400 kHz
CC
CC
CC
CC
), the strong pull-down reverts to a weak current source.
OL
OL
= 5.5 V
= 3.3 V
= 1.8 V
CC
= 1.0 mA
= 3.0 mA
CC
+ 0.5 V. During transitions, the voltage on any pin may
CC
V
CC
Min
-0.5
Program/ Erase Cycles
Characteristics subject to change without notice
x 0.7 V
© 2006 by Catalyst Semiconductor, Inc.
V
Units
Years
-65°C to +150°C
-0.5 V to +6.5 V
CC
CC
Max
200
150
100
Max
0.4
0.2
8
6
1
1
1
1
1
+ 0.5
x 0.3
Units
Units
pF
pF
μA
mA
mA
μA
μA
V
V
V
V