APTGT30TL601G Microsemi Corporation, APTGT30TL601G Datasheet - Page 2

• Manufacturer Part Number: APTGT30TL601G
• Description: Three Level Inverter Trench Field Stop Igbt Power Module
• Manufacturer: Microsemi Corporation

Q1 to Q4 Electrical Characteristics
Q1 to Q4 Dynamic Characteristics
Symbol Characteristic
Symbol Characteristic
V
V
T
T
T
T
R
I
I
C
C
C
E
CE(sat)
Q
E
GE(th)
CES
GES
T
d(off)
T
T
d(off)
T
I
d(on)
d(on)
thJC
oes
off
sc
ies
res
on
G
f
f
r
r
Zero Gate Voltage Collector Current
Collector Emitter Saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Short Circuit data
Junction to Case Thermal Resistance
All ratings @ T
j
= 25°C unless otherwise specified
www.microsemi.com
V
R
Test Conditions
V
I
V
V
Test Conditions
V
V
f = 1MHz
V
V
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (150°C)
V
V
I
R
V
V
I
V
t
p
C
C
C
C
G
GE
G
G
GE
GE
GE
GE
CE
GE
CE
GE
Bus
GE
Bus
GE
Bus
GE
≤ 6µs ; T
= 30A
= 30A
= 30A
= 30A
= 10Ω
= 10Ω
= 10Ω
=±15V, I
=300V
= 0V, V
=15V
= V
= 20V, V
= 0V
= 25V
= ±15V
= ±15V
= ±15V
≤15V ; V
= 300V
= 300V
= 300V
CE
, I
j
= 150°C
CE
C
C
CE
Bus
=30A
= 600V
= 400µA
= 0V
= 360V
T
T
T
T
T
T
j
j
j
j
j
j
= 25°C
= 25°C
= 150°C
= 25°C
= 150°C
= 150°C
APTGT30TL601G
Min
Min
5.0
1600
0.16
1.05
Typ
Typ
110
110
200
120
250
150
1.5
1.7
5.8
0.3
0.3
0.7
50
45
40
50
60
Max
Max
250
300
1.9
6.5
1.6
Unit
°C/W
Unit
µA
nA
µC
mJ
mJ
V
V
pF
ns
ns
A
2 - 7