APTGT30TL601G Microsemi Corporation, APTGT30TL601G Datasheet - Page 7

• Manufacturer Part Number: APTGT30TL601G
• Description: Three Level Inverter Trench Field Stop Igbt Power Module
• Manufacturer: Microsemi Corporation

Microsemi reserves the right to change, without notice, the specifications and information contained herein
CR5 & CR6 Typical performance curve
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.75
0.25
60
50
40
30
20
10
2.5
1.5
0.5
Switching Energy Losses vs Gate Resistance
0.5
0.00001
0
3
2
1
0
1
0
0
0
0.5
0.3
0.9
0.1
0.7
0.05
Forward Characteristic of diode
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4
10
J
=150°C
Gate Resistance (ohms)
20
0.8
0.0001
30
V
1.2
F
(V)
40
T
J
=25°C
1.6
50
V
V
I
T
C
CE
GE
J
= 30A
0.001
Rectangular Pulse Duration in Seconds
= 150°C
= 300V
=15V
2
60
Single Pulse
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2.4
70
0.01
0.75
0.25
0.5
1
0
APTGT30TL601G
0
Energy losses vs Collector Current
0.1
V
V
R
T
CE
GE
J
G
= 150°C
= 10Ω
= 300V
= 15V
10
20
I
F
30
(A)
1
40
50
10
60
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